Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs

Jhang Yan Ciou, Sourav De, Chien Wei Wang, Wallace Lin, Yao Jen Lee, Darsen Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25\text{nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier lowering effects. The improvement is found to be significantly more prominent for short channel devices than long ones, which demonstrates the tremendous advantage of negative capacitance gate stack for scaled MOSFETs. A compact analytical formulation is developed to quantify sub-threshold swing improvement for short channel devices.

Original languageEnglish
Title of host publication2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728181769
DOIs
Publication statusPublished - 2021 Apr 8
Event5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China
Duration: 2021 Apr 82021 Apr 11

Publication series

Name2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/TerritoryChina
CityChengdu
Period21-04-0821-04-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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