Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

K. W. Lee; J. S. Huang; F. M. Lee; Y. S. Huang; Yeong-Her Wang; S. C. Su; B. H. Chao; C. C. Chen

doi:10.1109/EDSSC.2007.4450111

Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

K. W. Lee, J. S. Huang, F. M. Lee, Y. S. Huang, Yeong-Her Wang, S. C. Su, B. H. Chao, C. C. Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	259-262
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450111
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/EDSSC.2007.4450111

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Lee, K. W., Huang, J. S., Lee, F. M., Huang, Y. S., Wang, Y.-H., Su, S. C., Chao, B. H., & Chen, C. C. (2007). Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 259-262). Article 4450111 https://doi.org/10.1109/EDSSC.2007.4450111

@inproceedings{e4cf04a1af334fd489ab9f11225a975f,

title = "Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate",

abstract = "The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.",

author = "Lee, {K. W.} and Huang, {J. S.} and Lee, {F. M.} and Huang, {Y. S.} and Yeong-Her Wang and Su, {S. C.} and Chao, {B. H.} and Chen, {C. C.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450111",

language = "English",

isbn = "1424406374",

pages = "259--262",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Lee, KW, Huang, JS, Lee, FM, Huang, YS, Wang, Y-H, Su, SC, Chao, BH & Chen, CC 2007, Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450111, pp. 259-262, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450111

TY - GEN

T1 - Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

AU - Lee, K. W.

AU - Huang, J. S.

AU - Lee, F. M.

AU - Huang, Y. S.

AU - Wang, Yeong-Her

AU - Su, S. C.

AU - Chao, B. H.

AU - Chen, C. C.

PY - 2007

Y1 - 2007

N2 - The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.

AB - The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.

UR - http://www.scopus.com/inward/record.url?scp=43049170086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049170086&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2007.4450111

DO - 10.1109/EDSSC.2007.4450111

M3 - Conference contribution

AN - SCOPUS:43049170086

SN - 1424406374

SN - 9781424406371

SP - 259

EP - 262

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

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