Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

K. W. Lee, J. S. Huang, F. M. Lee, Y. S. Huang, Yeong-Her Wang, S. C. Su, B. H. Chao, C. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages259-262
Number of pages4
DOIs
Publication statusPublished - 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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