Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

K. W. Lee, J. S. Huang, F. M. Lee, Y. S. Huang, Yeong-Her Wang, S. C. Su, B. H. Chao, C. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science

Chemical Compounds