@inproceedings{ebdcfa518fee47e383f5130ec90e6592,
title = "Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control",
abstract = "We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.",
author = "S. Khandelwal and Chauhan, {Y. S.} and Lu, {Darsen D.} and Karim, {M. A.} and S. Venugopalan and A. Sachid and A. Niknejad and C. Hu",
year = "2012",
language = "English",
isbn = "9781466562752",
series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",
pages = "780--783",
booktitle = "Nanotechnology 2012",
note = "Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 ; Conference date: 18-06-2012 Through 21-06-2012",
}