Analyzing BTI effects on retention registers

Yao Te Wang, Ing-Chao Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.

Original languageEnglish
Title of host publicationProceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012
Pages71-77
Number of pages7
DOIs
Publication statusPublished - 2012 Nov 26
Event4th Asia Symposium on Quality Electronic Design, ASQED 2012 - Penang, Malaysia
Duration: 2012 Jul 102012 Jul 11

Publication series

NameProceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012

Other

Other4th Asia Symposium on Quality Electronic Design, ASQED 2012
CountryMalaysia
CityPenang
Period12-07-1012-07-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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