Analyzing BTI effects on retention registers

Yao Te Wang, Ing-Chao Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.

Original languageEnglish
Title of host publicationProceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012
Pages71-77
Number of pages7
DOIs
Publication statusPublished - 2012 Nov 26
Event4th Asia Symposium on Quality Electronic Design, ASQED 2012 - Penang, Malaysia
Duration: 2012 Jul 102012 Jul 11

Publication series

NameProceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012

Other

Other4th Asia Symposium on Quality Electronic Design, ASQED 2012
Country/TerritoryMalaysia
CityPenang
Period12-07-1012-07-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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