Analyzing BTI effects on retention registers

Yao Te Wang; Ing Chao Lin

doi:10.1109/ACQED.2012.6320478

Analyzing BTI effects on retention registers

Yao Te Wang, Ing Chao Lin

Department of Computer Science and Information Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.

Original language	English
Title of host publication	Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012
Pages	71-77
Number of pages	7
DOIs	https://doi.org/10.1109/ACQED.2012.6320478
Publication status	Published - 2012
Event	4th Asia Symposium on Quality Electronic Design, ASQED 2012 - Penang, Malaysia Duration: 2012 Jul 10 → 2012 Jul 11

Publication series

Name	Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012

Other

Other	4th Asia Symposium on Quality Electronic Design, ASQED 2012
Country/Territory	Malaysia
City	Penang
Period	12-07-10 → 12-07-11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ACQED.2012.6320478

Cite this

@inproceedings{ce841fc1c9b44cc681a676228acee447,

title = "Analyzing BTI effects on retention registers",

abstract = "As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.",

author = "Wang, {Yao Te} and Lin, {Ing Chao}",

year = "2012",

doi = "10.1109/ACQED.2012.6320478",

language = "English",

isbn = "9781467326889",

series = "Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012",

pages = "71--77",

booktitle = "Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012",

note = "4th Asia Symposium on Quality Electronic Design, ASQED 2012 ; Conference date: 10-07-2012 Through 11-07-2012",

}

Wang, YT & Lin, IC 2012, Analyzing BTI effects on retention registers. in Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012., 6320478, Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012, pp. 71-77, 4th Asia Symposium on Quality Electronic Design, ASQED 2012, Penang, Malaysia, 12-07-10. https://doi.org/10.1109/ACQED.2012.6320478

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AU - Wang, Yao Te

AU - Lin, Ing Chao

PY - 2012

Y1 - 2012

N2 - As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.

AB - As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.

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UR - http://www.scopus.com/inward/citedby.url?scp=84869422844&partnerID=8YFLogxK

U2 - 10.1109/ACQED.2012.6320478

DO - 10.1109/ACQED.2012.6320478

M3 - Conference contribution

AN - SCOPUS:84869422844

SN - 9781467326889

T3 - Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012

SP - 71

EP - 77

BT - Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012

T2 - 4th Asia Symposium on Quality Electronic Design, ASQED 2012

Y2 - 10 July 2012 through 11 July 2012

ER -

Analyzing BTI effects on retention registers

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All Science Journal Classification (ASJC) codes

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