TY - GEN
T1 - Analyzing BTI effects on retention registers
AU - Wang, Yao Te
AU - Lin, Ing-Chao
PY - 2012/11/26
Y1 - 2012/11/26
N2 - As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.
AB - As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.
UR - http://www.scopus.com/inward/record.url?scp=84869422844&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869422844&partnerID=8YFLogxK
U2 - 10.1109/ACQED.2012.6320478
DO - 10.1109/ACQED.2012.6320478
M3 - Conference contribution
AN - SCOPUS:84869422844
SN - 9781467326889
T3 - Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012
SP - 71
EP - 77
BT - Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012
T2 - 4th Asia Symposium on Quality Electronic Design, ASQED 2012
Y2 - 10 July 2012 through 11 July 2012
ER -