Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection

Cheng Guo, Yibin Hu, Gang Chen, Dacheng Wei, Libo Zhang, Zhiqingzi Chen, Wanlong Guo, Huang Xu, Chia Nung Kuo, Chin Shan Lue, Xiangyan Bo, Xiangang Wan, Lin Wang, Antonio Politano, Xiaoshuang Chen, Wei Lu

Research output: Contribution to journalArticlepeer-review

Abstract

Emergent topological Dirac semimetals afford fresh pathways for optoelectronics, although device implementation has been elusive to date. Specifically, palladium ditelluride (PdTe2) combines the capabilities provided by its peculiar band structure, with topologically protected electronic states, with advantages related to the occurrence of high-mobility charge carriers and ambient stability. Here, we demonstrate large photogalvanic effects with high anisotropy at terahertz frequency in PdTe2-based devices. A responsivity of 10 A/W and a noise-equivalent power lower than 2 pW/Hz0.5 are achieved at room temperature, validating the suitability of PdTe2-based devices for applications in photosensing, polarization-sensitive detection, and large-area fast imaging. Our findings open opportunities for exploring uncooled and sensitive photoelectronic devices based on topological semimetals, especially in the highly pursuit terahertz band.

Original languageEnglish
Article numbereabb6500
JournalScience Advances
Volume6
Issue number36
DOIs
Publication statusPublished - 2020 Sep

All Science Journal Classification (ASJC) codes

  • General

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