Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE

S. J. Cai; Y. S. Tang; R. Li; Y. Y. Wei; L. Wong; Y. L. Chen; K. L. Wang; Mary Chen; Y. F. Zhao; R. D. Schrimpf; J. C. Keay; K. F. Galloway

doi:10.1109/16.822272

Annealing behavior of a proton irradiated Al_xGa_1-xN/GaN high electron mobility transistor grown by MBE

S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, Mary Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, K. F. Galloway

College of Electrical Engineering and Computer Science

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96 Citations (Scopus)

Abstract

The influence of proton irradiation (1.8 MeV, 1×10¹⁴ cm^-2) on the properties of an Al_xGa_1-xN/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (I_ds) and the transconductance (g_m) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800 °C.

Original language	English
Pages (from-to)	304-307
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	2
DOIs	https://doi.org/10.1109/16.822272
Publication status	Published - 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.822272

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@article{91270801833743e8b54fb1afabb470e2,

title = "Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE",

abstract = "The influence of proton irradiation (1.8 MeV, 1×1014 cm-2) on the properties of an AlxGa1-xN/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (Ids) and the transconductance (gm) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800 °C.",

author = "Cai, {S. J.} and Tang, {Y. S.} and R. Li and Wei, {Y. Y.} and L. Wong and Chen, {Y. L.} and Wang, {K. L.} and Mary Chen and Zhao, {Y. F.} and Schrimpf, {R. D.} and Keay, {J. C.} and Galloway, {K. F.}",

note = "Funding Information: This work is supported in part by BMDO (managed by Dr. Kepi Wu and monitored by Dr. G. Chambers).",

year = "2000",

doi = "10.1109/16.822272",

language = "English",

volume = "47",

pages = "304--307",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE

AU - Cai, S. J.

AU - Tang, Y. S.

AU - Li, R.

AU - Wei, Y. Y.

AU - Wong, L.

AU - Chen, Y. L.

AU - Wang, K. L.

AU - Chen, Mary

AU - Zhao, Y. F.

AU - Schrimpf, R. D.

AU - Keay, J. C.

AU - Galloway, K. F.

N1 - Funding Information: This work is supported in part by BMDO (managed by Dr. Kepi Wu and monitored by Dr. G. Chambers).

PY - 2000

Y1 - 2000

N2 - The influence of proton irradiation (1.8 MeV, 1×1014 cm-2) on the properties of an AlxGa1-xN/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (Ids) and the transconductance (gm) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800 °C.

AB - The influence of proton irradiation (1.8 MeV, 1×1014 cm-2) on the properties of an AlxGa1-xN/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (Ids) and the transconductance (gm) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800 °C.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033908841&partnerID=8YFLogxK

U2 - 10.1109/16.822272

DO - 10.1109/16.822272

M3 - Article

AN - SCOPUS:0033908841

SN - 0018-9383

VL - 47

SP - 304

EP - 307

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Annealing behavior of a proton irradiated Al_xGa_1-xN/GaN high electron mobility transistor grown by MBE

Abstract

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