Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE

S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, Mary Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, K. F. Galloway

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82 Citations (Scopus)

Abstract

The influence of proton irradiation (1.8 MeV, 1×1014 cm-2) on the properties of an AlxGa1-xN/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (Ids) and the transconductance (gm) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800 °C.

Original languageEnglish
Pages (from-to)304-307
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume47
Issue number2
DOIs
Publication statusPublished - 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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