Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE

S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, Mary Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, K. F. Galloway

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