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Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE
S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, Mary Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, K. F. Galloway
Research output: Contribution to journal › Article › peer-review
87
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(Scopus)