TY - JOUR
T1 - Annealing effect on conductivity behavior of Lidoped ZnO thin film and its application as ZnO-based homojunction device
AU - Tsai, Shu Yi
AU - Hon, Min Hsiung
AU - Lu, Yang Ming
N1 - Funding Information:
The authors are grateful to the National Science Council in Taiwan for financially supporting this research under 98-2221-E-006-075-MY3 and 99-2221-E-024-003 .
PY - 2011/7/1
Y1 - 2011/7/1
N2 - Transparent electronics is an advanced technology concerning the realization of invisible electronic circuits. The p-type doping in ZnO wide band gap semiconductor has been a challenge for research for many years. In this work, Lithium-doped ZnO films were deposited by the RF magnetron sputtering method. The influence of post-annealing temperature on the electrical, structural and optical properties of ZnO:Li films were investigated. The results show that the ZnO:Li films show (0 0 2) preferred orientation and high average transmittance about 85% in the visible region after annealing temperature of about 550 °C. The optimal p-type conduction of ZnO:Li film is achieved at the post-annealing temperature of 450 °C with a resistivity of 0.22 Ω cm, hole carrier concentration of 2.47×1018 cm-3 and mobility of 0.22 cm2/V s. Finally, pn homojunction based on transparent semiconducting oxides is fabricated.
AB - Transparent electronics is an advanced technology concerning the realization of invisible electronic circuits. The p-type doping in ZnO wide band gap semiconductor has been a challenge for research for many years. In this work, Lithium-doped ZnO films were deposited by the RF magnetron sputtering method. The influence of post-annealing temperature on the electrical, structural and optical properties of ZnO:Li films were investigated. The results show that the ZnO:Li films show (0 0 2) preferred orientation and high average transmittance about 85% in the visible region after annealing temperature of about 550 °C. The optimal p-type conduction of ZnO:Li film is achieved at the post-annealing temperature of 450 °C with a resistivity of 0.22 Ω cm, hole carrier concentration of 2.47×1018 cm-3 and mobility of 0.22 cm2/V s. Finally, pn homojunction based on transparent semiconducting oxides is fabricated.
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U2 - 10.1016/j.jcrysgro.2011.01.058
DO - 10.1016/j.jcrysgro.2011.01.058
M3 - Article
AN - SCOPUS:79960186776
SN - 0022-0248
VL - 326
SP - 85
EP - 89
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -