Annealing effect on conductivity behavior of Lidoped ZnO thin film and its application as ZnO-based homojunction device

Shu Yi Tsai, Min Hsiung Hon, Yang Ming Lu

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Transparent electronics is an advanced technology concerning the realization of invisible electronic circuits. The p-type doping in ZnO wide band gap semiconductor has been a challenge for research for many years. In this work, Lithium-doped ZnO films were deposited by the RF magnetron sputtering method. The influence of post-annealing temperature on the electrical, structural and optical properties of ZnO:Li films were investigated. The results show that the ZnO:Li films show (0 0 2) preferred orientation and high average transmittance about 85% in the visible region after annealing temperature of about 550 °C. The optimal p-type conduction of ZnO:Li film is achieved at the post-annealing temperature of 450 °C with a resistivity of 0.22 Ω cm, hole carrier concentration of 2.47×1018 cm-3 and mobility of 0.22 cm2/V s. Finally, pn homojunction based on transparent semiconducting oxides is fabricated.

Original languageEnglish
Pages (from-to)85-89
Number of pages5
JournalJournal of Crystal Growth
Volume326
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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