Annealing Effect on the Adhesion of Stacked Films for MEMS

Chen Kuei Chung, Jeng Long Ou, Luh Huew Wu, Tzong Sheng Lee

Research output: Contribution to journalArticlepeer-review


Stack of patterned films is generally necessary for the MEMS devices during the post micromachining process at low temperature (<450°C). Peeling of stacked films is a serious problem due to the too large stress or stress variation during annealing. Four stacked PE-oxide/ evaporated amorphous Si/ sputtered Al/ PE-oxide films potentially for uncooled IR imager are prepared on the Si wafer. The purpose of amorphous Si is for the sacrificial layer of device during XeF2 dry release process. Different annealing technology and thermal cycle stress analysis of films were used to study the adhesion of such stacked films. Serious peeling of stacked films occurs during furnace annealing at 400°C while good adhesion is obtained by rapid thermal annealing at 400°C. This is attributed to the different stress variation of amorphous Si at different heating rate.

Original languageEnglish
Pages (from-to)415-418
Number of pages4
JournalInternational Journal of Nonlinear Sciences and Numerical Simulation
Issue number3-4
Publication statusPublished - 2002

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Computational Mechanics
  • Modelling and Simulation
  • Engineering (miscellaneous)
  • Mechanics of Materials
  • Physics and Astronomy(all)
  • Applied Mathematics

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