Annealing effect on the buffer layer of high-quality crystalline GaN

Tzong Bin Wang, Wei-Chou Hsu, Rong Tay Hsu, Yu Huei Wu, Yu Shyan Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

High-quality GaN films are prepared by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). In situ optical reflectance traces reveal that the ramping time from low temperature to high temperature in the growth of the nucleation layer significantly affects the surface roughness. Atomic force microscopy (AFM) images demonstrate that the increased ramping time improves the surface roughness and the quality of GaN films. Moreover, the surface roughness also influences the lateral growth and coalescence step. Furthermore, the dependence of the Hall measurement on temperature is investigated. The mobility of the lightly doped GaN is as high as 622 cm2/V-s at a corresponding carrier concentration of 1.1 × 1017 cm-3. The results of this study demonstrate that the proposed GaN films are of high quality and have the excellent electronic property.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages23-24
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06-07-2406-07-28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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