Annealing effect on the microstructure and morphology of the nanostructured Ta-Si-N thin films

Chen-Kuei Chung, T. S. Chen, C. C. Peng, B. H. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ta-Si-N thin films were potentially applied as diffusion barriers for Cu interconnections. However, the thermal stability of Ta-Si-N is related to the composition and annealing methods. In this paper, we have investigated the effect of highvacuum furnace annealing and vacuum rapid thermal annealing (RTA) on the microstructure and morphology of different nanostructured Ta-Si-N thin films fabricated by reactive cosputtering at varied Ta and Si powers and nitrogen flow ratio (FN2%= FN2/(FN2+FAr) × 100%). As Si is added to the Ta-N compound to form Ta-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like microstructure, which is also affected by the nitrogen flow ratio. Amorphous-like Ta-Si-N films obtained at small 3-6 FN2% had smoother morphology and lower resistivity compared to the polycrystalline film at high 20 FN2%. The thermal stability of Ta-Si-N films increases with the Si/Ta ratio and magnitude of vacuum. Higher vacuum furnace annealing at 5 × 10-5 Torr may make both amorphous-like and polycrystalline Ta-Si-N films enduring higher temperature up to 900 °C for a longer time of 1 h while the higher pressure RTA at 2 × 10-2 Torr make Ta-Si-N films transform of phase and morphology at 750-900 °C just in 1 min. The increase of Si/Ta ratio may also increases the stability of Ta-Si-N films.

Original languageEnglish
Title of host publication3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
Pages982-985
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 1
Event3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 - Sanya, China
Duration: 2008 Jan 62008 Jan 9

Publication series

Name3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS

Other

Other3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
CountryChina
CitySanya
Period08-01-0608-01-09

Fingerprint

Annealing
Thin films
Microstructure
Rapid thermal annealing
Thermodynamic stability
Vacuum
Nitrogen
Vacuum furnaces
Diffusion barriers
Furnaces
Chemical analysis
Temperature

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Chung, C-K., Chen, T. S., Peng, C. C., & Wu, B. H. (2008). Annealing effect on the microstructure and morphology of the nanostructured Ta-Si-N thin films. In 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 (pp. 982-985). [4484486] (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS). https://doi.org/10.1109/NEMS.2008.4484486
Chung, Chen-Kuei ; Chen, T. S. ; Peng, C. C. ; Wu, B. H. / Annealing effect on the microstructure and morphology of the nanostructured Ta-Si-N thin films. 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. pp. 982-985 (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS).
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abstract = "Ta-Si-N thin films were potentially applied as diffusion barriers for Cu interconnections. However, the thermal stability of Ta-Si-N is related to the composition and annealing methods. In this paper, we have investigated the effect of highvacuum furnace annealing and vacuum rapid thermal annealing (RTA) on the microstructure and morphology of different nanostructured Ta-Si-N thin films fabricated by reactive cosputtering at varied Ta and Si powers and nitrogen flow ratio (FN2{\%}= FN2/(FN2+FAr) × 100{\%}). As Si is added to the Ta-N compound to form Ta-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like microstructure, which is also affected by the nitrogen flow ratio. Amorphous-like Ta-Si-N films obtained at small 3-6 FN2{\%} had smoother morphology and lower resistivity compared to the polycrystalline film at high 20 FN2{\%}. The thermal stability of Ta-Si-N films increases with the Si/Ta ratio and magnitude of vacuum. Higher vacuum furnace annealing at 5 × 10-5 Torr may make both amorphous-like and polycrystalline Ta-Si-N films enduring higher temperature up to 900 °C for a longer time of 1 h while the higher pressure RTA at 2 × 10-2 Torr make Ta-Si-N films transform of phase and morphology at 750-900 °C just in 1 min. The increase of Si/Ta ratio may also increases the stability of Ta-Si-N films.",
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Chung, C-K, Chen, TS, Peng, CC & Wu, BH 2008, Annealing effect on the microstructure and morphology of the nanostructured Ta-Si-N thin films. in 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008., 4484486, 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS, pp. 982-985, 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008, Sanya, China, 08-01-06. https://doi.org/10.1109/NEMS.2008.4484486

Annealing effect on the microstructure and morphology of the nanostructured Ta-Si-N thin films. / Chung, Chen-Kuei; Chen, T. S.; Peng, C. C.; Wu, B. H.

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. p. 982-985 4484486 (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Ta-Si-N thin films were potentially applied as diffusion barriers for Cu interconnections. However, the thermal stability of Ta-Si-N is related to the composition and annealing methods. In this paper, we have investigated the effect of highvacuum furnace annealing and vacuum rapid thermal annealing (RTA) on the microstructure and morphology of different nanostructured Ta-Si-N thin films fabricated by reactive cosputtering at varied Ta and Si powers and nitrogen flow ratio (FN2%= FN2/(FN2+FAr) × 100%). As Si is added to the Ta-N compound to form Ta-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like microstructure, which is also affected by the nitrogen flow ratio. Amorphous-like Ta-Si-N films obtained at small 3-6 FN2% had smoother morphology and lower resistivity compared to the polycrystalline film at high 20 FN2%. The thermal stability of Ta-Si-N films increases with the Si/Ta ratio and magnitude of vacuum. Higher vacuum furnace annealing at 5 × 10-5 Torr may make both amorphous-like and polycrystalline Ta-Si-N films enduring higher temperature up to 900 °C for a longer time of 1 h while the higher pressure RTA at 2 × 10-2 Torr make Ta-Si-N films transform of phase and morphology at 750-900 °C just in 1 min. The increase of Si/Ta ratio may also increases the stability of Ta-Si-N films.

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Chung C-K, Chen TS, Peng CC, Wu BH. Annealing effect on the microstructure and morphology of the nanostructured Ta-Si-N thin films. In 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. p. 982-985. 4484486. (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS). https://doi.org/10.1109/NEMS.2008.4484486