Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films

C. Y. Kung, F. H. Wang, Cheng-Liang Huang, T. T. Lin, S. L. Young

Research output: Contribution to conferencePaper

Abstract

The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.

Original languageEnglish
Pages43-45
Number of pages3
Publication statusPublished - 2014 Jan 1
Event2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China
Duration: 2013 Oct 262013 Nov 1

Other

Other2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
CountryChina
CityQingdao
Period13-10-2613-11-01

Fingerprint

Conductive films
Electric properties
Optical properties
Annealing
Substrates
Sol-gel process
Glass
Temperature
Electrical properties
Substrate

All Science Journal Classification (ASJC) codes

  • Management of Technology and Innovation

Cite this

Kung, C. Y., Wang, F. H., Huang, C-L., Lin, T. T., & Young, S. L. (2014). Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films. 43-45. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.
Kung, C. Y. ; Wang, F. H. ; Huang, Cheng-Liang ; Lin, T. T. ; Young, S. L. / Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.3 p.
@conference{d863b396e60242c1b468f1e60c1067a2,
title = "Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films",
abstract = "The transparent conductive AZO (Al: 1 at.{\%}) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86{\%} in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6{\%} less that of samples with different anneal temperatures.",
author = "Kung, {C. Y.} and Wang, {F. H.} and Cheng-Liang Huang and Lin, {T. T.} and Young, {S. L.}",
year = "2014",
month = "1",
day = "1",
language = "English",
pages = "43--45",
note = "2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 ; Conference date: 26-10-2013 Through 01-11-2013",

}

Kung, CY, Wang, FH, Huang, C-L, Lin, TT & Young, SL 2014, 'Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films' Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China, 13-10-26 - 13-11-01, pp. 43-45.

Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films. / Kung, C. Y.; Wang, F. H.; Huang, Cheng-Liang; Lin, T. T.; Young, S. L.

2014. 43-45 Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films

AU - Kung, C. Y.

AU - Wang, F. H.

AU - Huang, Cheng-Liang

AU - Lin, T. T.

AU - Young, S. L.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.

AB - The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.

UR - http://www.scopus.com/inward/record.url?scp=84896668825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896668825&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84896668825

SP - 43

EP - 45

ER -

Kung CY, Wang FH, Huang C-L, Lin TT, Young SL. Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films. 2014. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.