Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films

C. Y. Kung, F. H. Wang, Cheng-Liang Huang, T. T. Lin, S. L. Young

Research output: Contribution to conferencePaperpeer-review

Abstract

The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.

Original languageEnglish
Pages43-45
Number of pages3
Publication statusPublished - 2014 Jan 1
Event2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China
Duration: 2013 Oct 262013 Nov 1

Other

Other2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
CountryChina
CityQingdao
Period13-10-2613-11-01

All Science Journal Classification (ASJC) codes

  • Management of Technology and Innovation

Fingerprint Dive into the research topics of 'Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films'. Together they form a unique fingerprint.

Cite this