Annealing effect on the properties of La0.7Sr0.3MnO3 thin film grown on Si substrates by DC sputtering

D. R. Sahu, D. K. Mishra, Jow-Lay Huang, B. K. Roul

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The effect of annealing on the properties of La0.7Sr0.3MnO3 (LSMO) thin film deposited on Si substrates by DC sputtering has been investigated by X-ray diffraction (XRD), electrical and magnetic measurements. As-grown films show a lower metal-insulator transition (TMI) temperature than annealed films. As the annealing temperature increases, significantly higher TMI values are observed up to 270 K. We suggest that the increase of effective hole doping, induced by cationic vacancies due to the excess oxygen, is a possible reason for the observed trend in TMI. Annealing improves the magnetic homogeneity of the grain and grain boundaries. These improvements are favorable to enhance the intrinsic properties of the compound especially the decrease of resistivity. The decrease in resistivity induces the MR ratio to increase. This result is attractive for CMR application studies.

Original languageEnglish
Pages (from-to)75-80
Number of pages6
JournalPhysica B: Condensed Matter
Volume396
Issue number1-2
DOIs
Publication statusPublished - 2007 Jun 15

Fingerprint

Sputtering
sputtering
direct current
Annealing
Thin films
annealing
Substrates
thin films
electrical resistivity
Metal insulator transition
Magnetic variables measurement
electrical measurement
Superconducting transition temperature
Vacancies
magnetic measurement
homogeneity
Grain boundaries
grain boundaries
transition temperature
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The effect of annealing on the properties of La0.7Sr0.3MnO3 (LSMO) thin film deposited on Si substrates by DC sputtering has been investigated by X-ray diffraction (XRD), electrical and magnetic measurements. As-grown films show a lower metal-insulator transition (TMI) temperature than annealed films. As the annealing temperature increases, significantly higher TMI values are observed up to 270 K. We suggest that the increase of effective hole doping, induced by cationic vacancies due to the excess oxygen, is a possible reason for the observed trend in TMI. Annealing improves the magnetic homogeneity of the grain and grain boundaries. These improvements are favorable to enhance the intrinsic properties of the compound especially the decrease of resistivity. The decrease in resistivity induces the MR ratio to increase. This result is attractive for CMR application studies.",
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Annealing effect on the properties of La0.7Sr0.3MnO3 thin film grown on Si substrates by DC sputtering. / Sahu, D. R.; Mishra, D. K.; Huang, Jow-Lay; Roul, B. K.

In: Physica B: Condensed Matter, Vol. 396, No. 1-2, 15.06.2007, p. 75-80.

Research output: Contribution to journalArticle

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AU - Sahu, D. R.

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AB - The effect of annealing on the properties of La0.7Sr0.3MnO3 (LSMO) thin film deposited on Si substrates by DC sputtering has been investigated by X-ray diffraction (XRD), electrical and magnetic measurements. As-grown films show a lower metal-insulator transition (TMI) temperature than annealed films. As the annealing temperature increases, significantly higher TMI values are observed up to 270 K. We suggest that the increase of effective hole doping, induced by cationic vacancies due to the excess oxygen, is a possible reason for the observed trend in TMI. Annealing improves the magnetic homogeneity of the grain and grain boundaries. These improvements are favorable to enhance the intrinsic properties of the compound especially the decrease of resistivity. The decrease in resistivity induces the MR ratio to increase. This result is attractive for CMR application studies.

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