TY - JOUR
T1 - Annealing effects of Sn-Al and Sn-Cu nano thin films on mechanism of electromagnetic interference shielding
AU - Hung, Fei Shuo
AU - Hung, Fei Yi
AU - Chiang, Che Ming
AU - Lui, Truan Sheng
N1 - Funding Information:
The authors are grateful to the Center for Micro/ Nano Science and Technology, National Cheng Kung University (NCKU Project of Promoting Academic Excellence & Developing World Class Research Center: D97-2700) and NSC 98-2221-E-006-068; NSC 98-2622-E-006-024-CC3 for the financial support.
PY - 2011/9
Y1 - 2011/9
N2 - The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference (EMI) shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.
AB - The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference (EMI) shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.
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U2 - 10.1016/S1003-6326(11)60966-7
DO - 10.1016/S1003-6326(11)60966-7
M3 - Article
AN - SCOPUS:80655137721
VL - 21
SP - 2020
EP - 2025
JO - Transactions of Nonferrous Metals Society of China
JF - Transactions of Nonferrous Metals Society of China
SN - 1003-6326
IS - 9
ER -