Annealing effects of Sn-Al and Sn-Cu nano thin films on mechanism of electromagnetic interference shielding

Fei Shuo Hung; Fei Yi Hung; Che Ming Chiang; Truan Sheng Lui

doi:10.1016/S1003-6326(11)60966-7

Annealing effects of Sn-Al and Sn-Cu nano thin films on mechanism of electromagnetic interference shielding

Fei Shuo Hung, Fei Yi Hung, Che Ming Chiang, Truan Sheng Lui

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference (EMI) shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.

Original language	English
Pages (from-to)	2020-2025
Number of pages	6
Journal	Transactions of Nonferrous Metals Society of China (English Edition)
Volume	21
Issue number	9
DOIs	https://doi.org/10.1016/S1003-6326(11)60966-7
Publication status	Published - 2011 Sep 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Geotechnical Engineering and Engineering Geology
Metals and Alloys
Materials Chemistry

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title = "Annealing effects of Sn-Al and Sn-Cu nano thin films on mechanism of electromagnetic interference shielding",

abstract = "The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference (EMI) shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.",

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AU - Hung, Fei Shuo

AU - Hung, Fei Yi

AU - Chiang, Che Ming

AU - Lui, Truan Sheng

PY - 2011/9/1

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N2 - The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference (EMI) shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.

AB - The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference (EMI) shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.

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