Annealing influences on phosphorus-ion-implanted vicinal Si(111) studied by reflective second-harmonic generation

Kuang-Yao Lo, Yi Jen Huang

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11 Citations (Scopus)

Abstract

Annealing effects on the implanted vicinal Si(111) were analyzed by reflective second-harmonic generation (RSHG). The phenomena of impurity diffusion and precipitation were observed through the anisotropic contribution of the C3V component in the RSHG rotational anisotropy experiments for a series of rapid thermal annealing (RTA) times. The surface reconstruction of the implanted vicinal Si(111) was clearly observed due to the contribution of the C1V symmetry which is raised from the step structure on the vicinal surface. The enhanced value of the C1V component originates because P atoms participate in the surface reconstruction. The phase difference between the C3V and C1V components has large variations at lower RTA temperature because the reconstruction situation near the surface was not completed until the RTA time of 30 s and was influenced by the precipitation of P atoms. With the assistance of step structure on vicinal Si(111), the reconstruction of the implanted Si(111) reveals more physical information.

Original languageEnglish
Article number035302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number3
DOIs
Publication statusPublished - 2007 Jul 3

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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