Annealing pressure induced ions transfer in Cobalt-Ferrite thin films on amorphous SiO₂/Si substrates

In this work, Cobalt-Ferrite (CFO) films were grown on silicon substrates with 300 nm amorphous silicon dioxide by Pulsed Laser Deposition (PLD) with different annealing conditions. The results of structural analysis prove that the CFO films have high crystalline quality with (1 1 1) preferred orientation. The Raman spectra and X-ray absorption spectra (XAS) indicate that the Co ions can transfer from tetrahedral sites to octahedral sites with increasing the annealing pressure. The site exchange of Co and Fe ions leads to the change of saturation magnetization in the CFO films. Our experiments provide not only a way to control the magnetism of CFO films, but also a suitable magnetic layer to develop silicon and semiconductor based spintronic devices.