Annealing temperature and O2 partial pressure dependence of Tc in HgBa2CuO4+δ

Q. Xiong; Y. Cao; F. Chen; Y. Y. Xue; C. W. Chu

doi:10.1063/1.358052

Annealing temperature and O₂ partial pressure dependence of T_c in HgBa₂CuO_4+δ

Q. Xiong, Y. Cao, F. Chen, Y. Y. Xue, C. W. Chu

Executive Vice President

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Samples of HgBa₂CuO_4+δ (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (T_a), and O₂ partial pressure (P₀), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O₂ at 260°C≤T_a≤400°C, the obtained T_c is nearly the same (∼97 K). However, it decreases quickly with T_a≳300°C in high vacuum (P₀∼10^-8 atm), and reaches zero at T_a=400°C. On the other hand, T _c decreases with the decrease of T_a in high-pressure O₂ (∼500 atm) and reaches ∼20 K at about 240°C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of T_c variation (0→97 K→20 K) was obtained with anion doping alone.

Original language	English
Pages (from-to)	7127-7129
Number of pages	3
Journal	Journal of Applied Physics
Volume	76
Issue number	10
DOIs	https://doi.org/10.1063/1.358052
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.358052

Cite this

@article{f0e0780760184a8bb9427ff5e1a4194d,

title = "Annealing temperature and O2 partial pressure dependence of Tc in HgBa2CuO4+δ",

abstract = "Samples of HgBa2CuO4+δ (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (Ta), and O2 partial pressure (P0), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O2 at 260°C≤Ta≤400°C, the obtained Tc is nearly the same (∼97 K). However, it decreases quickly with Ta≳300°C in high vacuum (P0∼10-8 atm), and reaches zero at Ta=400°C. On the other hand, T c decreases with the decrease of Ta in high-pressure O2 (∼500 atm) and reaches ∼20 K at about 240°C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of Tc variation (0→97 K→20 K) was obtained with anion doping alone.",

author = "Q. Xiong and Y. Cao and F. Chen and Xue, {Y. Y.} and Chu, {C. W.}",

year = "1994",

doi = "10.1063/1.358052",

language = "English",

volume = "76",

pages = "7127--7129",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Annealing temperature and O2 partial pressure dependence of Tc in HgBa2CuO4+δ

AU - Xiong, Q.

AU - Cao, Y.

AU - Chen, F.

AU - Xue, Y. Y.

AU - Chu, C. W.

PY - 1994

Y1 - 1994

N2 - Samples of HgBa2CuO4+δ (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (Ta), and O2 partial pressure (P0), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O2 at 260°C≤Ta≤400°C, the obtained Tc is nearly the same (∼97 K). However, it decreases quickly with Ta≳300°C in high vacuum (P0∼10-8 atm), and reaches zero at Ta=400°C. On the other hand, T c decreases with the decrease of Ta in high-pressure O2 (∼500 atm) and reaches ∼20 K at about 240°C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of Tc variation (0→97 K→20 K) was obtained with anion doping alone.

AB - Samples of HgBa2CuO4+δ (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (Ta), and O2 partial pressure (P0), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O2 at 260°C≤Ta≤400°C, the obtained Tc is nearly the same (∼97 K). However, it decreases quickly with Ta≳300°C in high vacuum (P0∼10-8 atm), and reaches zero at Ta=400°C. On the other hand, T c decreases with the decrease of Ta in high-pressure O2 (∼500 atm) and reaches ∼20 K at about 240°C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of Tc variation (0→97 K→20 K) was obtained with anion doping alone.

UR - http://www.scopus.com/inward/record.url?scp=0040606507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040606507&partnerID=8YFLogxK

U2 - 10.1063/1.358052

DO - 10.1063/1.358052

M3 - Article

AN - SCOPUS:0040606507

SN - 0021-8979

VL - 76

SP - 7127

EP - 7129

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Annealing temperature and O₂ partial pressure dependence of T_c in HgBa₂CuO_4+δ

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this