Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

Shang En Wu, Chuan-Pu Liu, Tao Hung Hsueh, Hung Chin Chung, Chih Chin Wang, Cheng Yu Wang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A GaN swelling-milling competition phenomenon was found under focused ion beam milling. Tuning the beam dwell time or introducing dopants into GaN is able to control the degree of GaN swelling, which makes feasible the writing of large-area nanopillar arrays. High-aspect-ratio InGaN/GaN MQW nanopillars were accordingly fabricated by a self-masking process where the tops of the p-GaN tips were swollen during milling. The shadowing effect from the swollen tops induced only minimal damage to the MQWs, with the cathodoluminescence (CL) emission peak of the InGaN/GaN MQWs showing a blue shift of about 35 meV compared with that of the as-grown wafer.

Original languageEnglish
Article number445301
JournalNanotechnology
Volume18
Issue number44
DOIs
Publication statusPublished - 2007 Nov 7

Fingerprint

Focused ion beams
Semiconductor quantum wells
Swelling
Cathodoluminescence
Aspect ratio
Tuning
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Wu, Shang En ; Liu, Chuan-Pu ; Hsueh, Tao Hung ; Chung, Hung Chin ; Wang, Chih Chin ; Wang, Cheng Yu. / Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling. In: Nanotechnology. 2007 ; Vol. 18, No. 44.
@article{584ea9c95e8341f3b947d7f18fbb35dd,
title = "Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling",
abstract = "A GaN swelling-milling competition phenomenon was found under focused ion beam milling. Tuning the beam dwell time or introducing dopants into GaN is able to control the degree of GaN swelling, which makes feasible the writing of large-area nanopillar arrays. High-aspect-ratio InGaN/GaN MQW nanopillars were accordingly fabricated by a self-masking process where the tops of the p-GaN tips were swollen during milling. The shadowing effect from the swollen tops induced only minimal damage to the MQWs, with the cathodoluminescence (CL) emission peak of the InGaN/GaN MQWs showing a blue shift of about 35 meV compared with that of the as-grown wafer.",
author = "Wu, {Shang En} and Chuan-Pu Liu and Hsueh, {Tao Hung} and Chung, {Hung Chin} and Wang, {Chih Chin} and Wang, {Cheng Yu}",
year = "2007",
month = "11",
day = "7",
doi = "10.1088/0957-4484/18/44/445301",
language = "English",
volume = "18",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "44",

}

Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling. / Wu, Shang En; Liu, Chuan-Pu; Hsueh, Tao Hung; Chung, Hung Chin; Wang, Chih Chin; Wang, Cheng Yu.

In: Nanotechnology, Vol. 18, No. 44, 445301, 07.11.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

AU - Wu, Shang En

AU - Liu, Chuan-Pu

AU - Hsueh, Tao Hung

AU - Chung, Hung Chin

AU - Wang, Chih Chin

AU - Wang, Cheng Yu

PY - 2007/11/7

Y1 - 2007/11/7

N2 - A GaN swelling-milling competition phenomenon was found under focused ion beam milling. Tuning the beam dwell time or introducing dopants into GaN is able to control the degree of GaN swelling, which makes feasible the writing of large-area nanopillar arrays. High-aspect-ratio InGaN/GaN MQW nanopillars were accordingly fabricated by a self-masking process where the tops of the p-GaN tips were swollen during milling. The shadowing effect from the swollen tops induced only minimal damage to the MQWs, with the cathodoluminescence (CL) emission peak of the InGaN/GaN MQWs showing a blue shift of about 35 meV compared with that of the as-grown wafer.

AB - A GaN swelling-milling competition phenomenon was found under focused ion beam milling. Tuning the beam dwell time or introducing dopants into GaN is able to control the degree of GaN swelling, which makes feasible the writing of large-area nanopillar arrays. High-aspect-ratio InGaN/GaN MQW nanopillars were accordingly fabricated by a self-masking process where the tops of the p-GaN tips were swollen during milling. The shadowing effect from the swollen tops induced only minimal damage to the MQWs, with the cathodoluminescence (CL) emission peak of the InGaN/GaN MQWs showing a blue shift of about 35 meV compared with that of the as-grown wafer.

UR - http://www.scopus.com/inward/record.url?scp=36048983509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36048983509&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/18/44/445301

DO - 10.1088/0957-4484/18/44/445301

M3 - Article

VL - 18

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 44

M1 - 445301

ER -