Anomalous Hall effect in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal

Kun Hsien Chen; Tzung I. Su; Hung Cheng Fang; Shih Chen Lee; Shui Tien Lin

doi:10.1016/S0925-8388(02)00252-9

Anomalous Hall effect in the hopping regime of the insulating Al₇₀Pd_22.5Re_7.5 quasicrystal

Kun Hsien Chen, Tzung I. Su, Hung Cheng Fang, Shih Chen Lee, Shui Tien Lin

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Abstract

The Hall coefficient RH is seen to rise rapidly with decreasing temperature in the hopping regime of the insulating Al₇₀Pd_22.5Re_7.5 quasicrystal with a resistivity ratio r = ρ(4.2 K)ρ(300 K) equal to 24 and to exhibit the variable-range hopping behavior i.e. R_H = R₀T_0HT^1/4. The obtained value of T_0H is much larger than the Mott's temperature T₀ extracted from the conductivity in the hopping regime. This is contrary to the prediction of Gruenewald et al. [Solid State Commum. 64 (1987) 11] for disordered systems. No existing theories can account for this anomalous effect.

Original language	English
Pages (from-to)	352-354
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	342
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-8388(02)00252-9
Publication status	Published - 2002 Aug 14
Event	QC2001 - Sendai, Japan Duration: 2001 Sep 24 → 2001 Sep 28

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "Anomalous Hall effect in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal",

abstract = "The Hall coefficient RH is seen to rise rapidly with decreasing temperature in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal with a resistivity ratio r = ρ(4.2 K)ρ(300 K) equal to 24 and to exhibit the variable-range hopping behavior i.e. RH = R0T0HT1/4. The obtained value of T0H is much larger than the Mott's temperature T0 extracted from the conductivity in the hopping regime. This is contrary to the prediction of Gruenewald et al. [Solid State Commum. 64 (1987) 11] for disordered systems. No existing theories can account for this anomalous effect.",

author = "Chen, {Kun Hsien} and Su, {Tzung I.} and Fang, {Hung Cheng} and Lee, {Shih Chen} and Lin, {Shui Tien}",

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T1 - Anomalous Hall effect in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal

AU - Chen, Kun Hsien

AU - Su, Tzung I.

AU - Fang, Hung Cheng

AU - Lee, Shih Chen

AU - Lin, Shui Tien

PY - 2002/8/14

Y1 - 2002/8/14

N2 - The Hall coefficient RH is seen to rise rapidly with decreasing temperature in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal with a resistivity ratio r = ρ(4.2 K)ρ(300 K) equal to 24 and to exhibit the variable-range hopping behavior i.e. RH = R0T0HT1/4. The obtained value of T0H is much larger than the Mott's temperature T0 extracted from the conductivity in the hopping regime. This is contrary to the prediction of Gruenewald et al. [Solid State Commum. 64 (1987) 11] for disordered systems. No existing theories can account for this anomalous effect.

AB - The Hall coefficient RH is seen to rise rapidly with decreasing temperature in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal with a resistivity ratio r = ρ(4.2 K)ρ(300 K) equal to 24 and to exhibit the variable-range hopping behavior i.e. RH = R0T0HT1/4. The obtained value of T0H is much larger than the Mott's temperature T0 extracted from the conductivity in the hopping regime. This is contrary to the prediction of Gruenewald et al. [Solid State Commum. 64 (1987) 11] for disordered systems. No existing theories can account for this anomalous effect.

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