Anomalous Hall effect in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal

Kun Hsien Chen, Tzung I. Su, Hung Cheng Fang, Shih Chen Lee, Shui Tien Lin

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The Hall coefficient RH is seen to rise rapidly with decreasing temperature in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal with a resistivity ratio r = ρ(4.2 K)ρ(300 K) equal to 24 and to exhibit the variable-range hopping behavior i.e. RH = R0T0HT1/4. The obtained value of T0H is much larger than the Mott's temperature T0 extracted from the conductivity in the hopping regime. This is contrary to the prediction of Gruenewald et al. [Solid State Commum. 64 (1987) 11] for disordered systems. No existing theories can account for this anomalous effect.

Original languageEnglish
Pages (from-to)352-354
Number of pages3
JournalJournal of Alloys and Compounds
Volume342
Issue number1-2
DOIs
Publication statusPublished - 2002 Aug 14
EventQC2001 - Sendai, Japan
Duration: 2001 Sep 242001 Sep 28

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Quasicrystals
Hall effect
Temperature

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Chen, Kun Hsien ; Su, Tzung I. ; Fang, Hung Cheng ; Lee, Shih Chen ; Lin, Shui Tien. / Anomalous Hall effect in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal. In: Journal of Alloys and Compounds. 2002 ; Vol. 342, No. 1-2. pp. 352-354.
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Anomalous Hall effect in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal. / Chen, Kun Hsien; Su, Tzung I.; Fang, Hung Cheng; Lee, Shih Chen; Lin, Shui Tien.

In: Journal of Alloys and Compounds, Vol. 342, No. 1-2, 14.08.2002, p. 352-354.

Research output: Contribution to journalConference article

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T1 - Anomalous Hall effect in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal

AU - Chen, Kun Hsien

AU - Su, Tzung I.

AU - Fang, Hung Cheng

AU - Lee, Shih Chen

AU - Lin, Shui Tien

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N2 - The Hall coefficient RH is seen to rise rapidly with decreasing temperature in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal with a resistivity ratio r = ρ(4.2 K)ρ(300 K) equal to 24 and to exhibit the variable-range hopping behavior i.e. RH = R0T0HT1/4. The obtained value of T0H is much larger than the Mott's temperature T0 extracted from the conductivity in the hopping regime. This is contrary to the prediction of Gruenewald et al. [Solid State Commum. 64 (1987) 11] for disordered systems. No existing theories can account for this anomalous effect.

AB - The Hall coefficient RH is seen to rise rapidly with decreasing temperature in the hopping regime of the insulating Al70Pd22.5Re7.5 quasicrystal with a resistivity ratio r = ρ(4.2 K)ρ(300 K) equal to 24 and to exhibit the variable-range hopping behavior i.e. RH = R0T0HT1/4. The obtained value of T0H is much larger than the Mott's temperature T0 extracted from the conductivity in the hopping regime. This is contrary to the prediction of Gruenewald et al. [Solid State Commum. 64 (1987) 11] for disordered systems. No existing theories can account for this anomalous effect.

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