Anomalous hot-carrier-induced increase in saturation-region drain current in n-type lateral diffused metal-oxide-semiconductor transistors

Shiang Yu Chen, Jone F. Chen, J. R. Lee, K. M.Kuo Ming Wu, C. M. Liu, S. L. Hsu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Anomalous increase in saturation-region drain current Id sat) but serious on-resistance degradation (decrease in linear-region drain current) is observed in n-type high-voltage lateral diffused MOS transistors stressed under medium gate voltage Vg . However, Id(sat) is degraded for the devices stressed under low and high Vg. Experimental data reveal that two competing mechanisms are responsible for the shift of Id (sat). One is the interface state Nit formation in the N- drift region. The other is the Nit formation in the channel region. The former mechanism leads to the anomalous increase in Id(sat), whereas the latter mechanism causes the Id(sat) to decrease. Experimental data and technology computer-aided-design simulations confirm that the impact ionization rate of the device is enhanced if significant Nit formation in the N- drift region is present. According to the results presented in this paper, significant Nit formation in the N- drift region is identified to be the main mechanism responsible for the anomalous increase in Id(sat).

Original languageEnglish
Pages (from-to)1137-1142
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume55
Issue number5
DOIs
Publication statusPublished - 2008 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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