Anomalous increase in hot-carrier-induced threshold voltage shift in n -type drain extended metal-oxide-semiconductor transistors

Jone-Fang Chen, Shiang Yu Chen, J. R. Lee, Kuo Ming Wu, Tsung Yi Huang, C. M. Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Anomalous increase in positive threshold voltage shift (Δ VT) in n -type drain extended metal-oxide-semiconductor (DEMOS) transistors stressed under high drain voltage and gate voltage is observed. Charge pumping data and technology computer-aided-design simulations reveal that hot-electron injection and trapping in the gate oxide above channel region is responsible for Δ VT. Enhanced impact ionization rate resulted from the presence of large amount of negative oxide charge in channel region is identified to be the main mechanism for anomalous increase in Δ VT. From the results presented in this letter, hot-carrier-induced anomalous increase in Δ VT can become a serious reliability concern in DEMOS transistors.

Original languageEnglish
Article number113509
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
Publication statusPublished - 2008 Mar 28

Fingerprint

metal oxide semiconductors
threshold voltage
transistors
shift
electric potential
oxides
computer aided design
hot electrons
high voltages
pumping
trapping
injection
ionization
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Anomalous increase in hot-carrier-induced threshold voltage shift in n -type drain extended metal-oxide-semiconductor transistors",
abstract = "Anomalous increase in positive threshold voltage shift (Δ VT) in n -type drain extended metal-oxide-semiconductor (DEMOS) transistors stressed under high drain voltage and gate voltage is observed. Charge pumping data and technology computer-aided-design simulations reveal that hot-electron injection and trapping in the gate oxide above channel region is responsible for Δ VT. Enhanced impact ionization rate resulted from the presence of large amount of negative oxide charge in channel region is identified to be the main mechanism for anomalous increase in Δ VT. From the results presented in this letter, hot-carrier-induced anomalous increase in Δ VT can become a serious reliability concern in DEMOS transistors.",
author = "Jone-Fang Chen and Chen, {Shiang Yu} and Lee, {J. R.} and Wu, {Kuo Ming} and Huang, {Tsung Yi} and Liu, {C. M.}",
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Anomalous increase in hot-carrier-induced threshold voltage shift in n -type drain extended metal-oxide-semiconductor transistors. / Chen, Jone-Fang; Chen, Shiang Yu; Lee, J. R.; Wu, Kuo Ming; Huang, Tsung Yi; Liu, C. M.

In: Applied Physics Letters, Vol. 92, No. 11, 113509, 28.03.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Anomalous increase in hot-carrier-induced threshold voltage shift in n -type drain extended metal-oxide-semiconductor transistors

AU - Chen, Jone-Fang

AU - Chen, Shiang Yu

AU - Lee, J. R.

AU - Wu, Kuo Ming

AU - Huang, Tsung Yi

AU - Liu, C. M.

PY - 2008/3/28

Y1 - 2008/3/28

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