Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

Lih Wen Laih; Cheng Zu Wu; Shiou Ying Cheng; Jung Hui Tsai; Wen Chau Liu

doi:10.1049/el:19961291

Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

Lih Wen Laih, Cheng Zu Wu, Shiou Ying Cheng, Jung Hui Tsai, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

An A1_0.3 Ga_0.7As/In_0.15Ga_0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.

Original language	English
Pages (from-to)	2014-2015
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	21
DOIs	https://doi.org/10.1049/el:19961291
Publication status	Published - 1996 Oct 10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19961291

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title = "Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)",

abstract = "An A10.3 Ga0.7As/In0.15Ga0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.",

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T1 - Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

AU - Laih, Lih Wen

AU - Wu, Cheng Zu

AU - Cheng, Shiou Ying

AU - Tsai, Jung Hui

AU - Liu, Wen Chau

PY - 1996/10/10

Y1 - 1996/10/10

N2 - An A10.3 Ga0.7As/In0.15Ga0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.

AB - An A10.3 Ga0.7As/In0.15Ga0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.

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Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

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