Anomalous negative-differential-resistance (NDR) characteristics of n+ -GaAs/n- -GaAs/n+ -In0.2Ga0.8As/i-GaAs structure

Lih Wen Laih, Wen Chau Liu, Jung Hui Tsai, Wei Chou Hsu, Yuan Tzu Ting, Rong Chau Liu

Research output: Contribution to journalArticlepeer-review


An n+-GaAs/n--GaAs/n+-In0.2Ga 0.8As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias (VGS). The influence of VGS bias on the NDR characteristics is investigated.

Original languageEnglish
Pages (from-to)7-13
Number of pages7
JournalSuperlattices and Microstructures
Issue number1
Publication statusPublished - 1996 Jun

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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