Anomalous negative-differential-resistance (NDR) characteristics of n+ -GaAs/n- -GaAs/n+ -In0.2Ga0.8As/i-GaAs structure

Lih Wen Laih; Wen Chau Liu; Jung Hui Tsai; Wei Chou Hsu; Yuan Tzu Ting; Rong Chau Liu

doi:10.1006/spmi.1996.0044

Anomalous negative-differential-resistance (NDR) characteristics of n⁺ -GaAs/n^- -GaAs/n⁺ -In_0.2Ga_0.8As/i-GaAs structure

Lih Wen Laih, Wen Chau Liu, Jung Hui Tsai, Wei Chou Hsu, Yuan Tzu Ting, Rong Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

An n⁺-GaAs/n^--GaAs/n⁺-In_0.2Ga _0.8As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage (V_DS) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias (V_GS). The influence of V_GS bias on the NDR characteristics is investigated.

Original language	English
Pages (from-to)	7-13
Number of pages	7
Journal	Superlattices and Microstructures
Volume	20
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1996.0044
Publication status	Published - 1996 Jun

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1006/spmi.1996.0044

Cite this

@article{11fb83f4718a4b8db9f317cf6189afe3,

title = "Anomalous negative-differential-resistance (NDR) characteristics of n+ -GaAs/n- -GaAs/n+ -In0.2Ga0.8As/i-GaAs structure",

abstract = "An n+-GaAs/n--GaAs/n+-In0.2Ga 0.8As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias (VGS). The influence of VGS bias on the NDR characteristics is investigated.",

author = "Laih, {Lih Wen} and Liu, {Wen Chau} and Tsai, {Jung Hui} and Hsu, {Wei Chou} and Ting, {Yuan Tzu} and Liu, {Rong Chau}",

note = "Funding Information: Acknowledgements—Part of this work was supported by the National Science Council of Republic of China under contract No. NSC 84-2215-E006-014.",

year = "1996",

month = jun,

doi = "10.1006/spmi.1996.0044",

language = "English",

volume = "20",

pages = "7--13",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "1",

}

TY - JOUR

T1 - Anomalous negative-differential-resistance (NDR) characteristics of n+ -GaAs/n- -GaAs/n+ -In0.2Ga0.8As/i-GaAs structure

AU - Laih, Lih Wen

AU - Liu, Wen Chau

AU - Tsai, Jung Hui

AU - Hsu, Wei Chou

AU - Ting, Yuan Tzu

AU - Liu, Rong Chau

N1 - Funding Information: Acknowledgements—Part of this work was supported by the National Science Council of Republic of China under contract No. NSC 84-2215-E006-014.

PY - 1996/6

Y1 - 1996/6

N2 - An n+-GaAs/n--GaAs/n+-In0.2Ga 0.8As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias (VGS). The influence of VGS bias on the NDR characteristics is investigated.

AB - An n+-GaAs/n--GaAs/n+-In0.2Ga 0.8As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias (VGS). The influence of VGS bias on the NDR characteristics is investigated.

UR - http://www.scopus.com/inward/record.url?scp=0029700368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029700368&partnerID=8YFLogxK

U2 - 10.1006/spmi.1996.0044

DO - 10.1006/spmi.1996.0044

M3 - Article

AN - SCOPUS:0029700368

SN - 0749-6036

VL - 20

SP - 7

EP - 13

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Anomalous negative-differential-resistance (NDR) characteristics of n⁺ -GaAs/n^- -GaAs/n⁺ -In_0.2Ga_0.8As/i-GaAs structure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this