An n+-GaAs/n--GaAs/n+-In0.2Ga 0.8As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias (VGS). The influence of VGS bias on the NDR characteristics is investigated.
|Number of pages||7|
|Journal||Superlattices and Microstructures|
|Publication status||Published - 1996 Jun|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering