Anomalous reduction of hot-carrier-induced ON-resistance degradation in n-type DEMOS transistors

K. M. Wu; Jone-Fang Chen; Y. K. Su; J. R. Lee; Yu-Cheng Lin; S. L. Hsu; J. R. Shih

doi:10.1109/TDMR.2006.881461

Anomalous reduction of hot-carrier-induced ON-resistance degradation in n-type DEMOS transistors

K. M. Wu, Jone-Fang Chen, Y. K. Su, J. R. Lee, Yu-Cheng Lin, S. L. Hsu, J. R. Shih

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Anomalous hot-carrier degradation phenomenon was observed in a 0.5-μm 12-V n-type drain-extended MOS transistors (N-DEMOS) with various n-type drain-drift (NDD) implant dosage. Under the same stress condition, the device with a higher NDD dosage produces a higher substrate current, a slightly higher transconductance degradation, but a lower ON-resistance (R_ON) degradation. Two degradation mechanisms are identified from the analysis of the electrical data and two-dimensional device simulations. The first mechanism is hot-electron injection in the accumulation region near the junction of the channel and accumulation regions. The second mechanism is hot-hole injection in the accumulation region near the spacer. This injection of hot holes creates a positive-charge trapping in the gate oxide, resulting in negative mirror charges in the accumulation region that reduces R_ON. The second mechanism is identified to account for the anomalous lower R_ON degradation.

Original language	English
Article number	1717485
Pages (from-to)	371-376
Number of pages	6
Journal	IEEE Transactions on Device and Materials Reliability
Volume	6
Issue number	3
DOIs	https://doi.org/10.1109/TDMR.2006.881461
Publication status	Published - 2006 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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10.1109/TDMR.2006.881461

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title = "Anomalous reduction of hot-carrier-induced ON-resistance degradation in n-type DEMOS transistors",

abstract = "Anomalous hot-carrier degradation phenomenon was observed in a 0.5-μm 12-V n-type drain-extended MOS transistors (N-DEMOS) with various n-type drain-drift (NDD) implant dosage. Under the same stress condition, the device with a higher NDD dosage produces a higher substrate current, a slightly higher transconductance degradation, but a lower ON-resistance (RON) degradation. Two degradation mechanisms are identified from the analysis of the electrical data and two-dimensional device simulations. The first mechanism is hot-electron injection in the accumulation region near the junction of the channel and accumulation regions. The second mechanism is hot-hole injection in the accumulation region near the spacer. This injection of hot holes creates a positive-charge trapping in the gate oxide, resulting in negative mirror charges in the accumulation region that reduces RON. The second mechanism is identified to account for the anomalous lower RON degradation.",

author = "Wu, {K. M.} and Jone-Fang Chen and Su, {Y. K.} and Lee, {J. R.} and Yu-Cheng Lin and Hsu, {S. L.} and Shih, {J. R.}",

note = "Funding Information: Manuscript received December 1, 2005; revised May 12, 2006. This work was supported in part by the National Science Council under Contract NSC94-2215-E006-061.",

year = "2006",

month = sep,

doi = "10.1109/TDMR.2006.881461",

language = "English",

volume = "6",

pages = "371--376",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Anomalous reduction of hot-carrier-induced ON-resistance degradation in n-type DEMOS transistors

AU - Wu, K. M.

AU - Chen, Jone-Fang

AU - Su, Y. K.

AU - Lee, J. R.

AU - Lin, Yu-Cheng

AU - Hsu, S. L.

AU - Shih, J. R.

N1 - Funding Information: Manuscript received December 1, 2005; revised May 12, 2006. This work was supported in part by the National Science Council under Contract NSC94-2215-E006-061.

PY - 2006/9

Y1 - 2006/9

N2 - Anomalous hot-carrier degradation phenomenon was observed in a 0.5-μm 12-V n-type drain-extended MOS transistors (N-DEMOS) with various n-type drain-drift (NDD) implant dosage. Under the same stress condition, the device with a higher NDD dosage produces a higher substrate current, a slightly higher transconductance degradation, but a lower ON-resistance (RON) degradation. Two degradation mechanisms are identified from the analysis of the electrical data and two-dimensional device simulations. The first mechanism is hot-electron injection in the accumulation region near the junction of the channel and accumulation regions. The second mechanism is hot-hole injection in the accumulation region near the spacer. This injection of hot holes creates a positive-charge trapping in the gate oxide, resulting in negative mirror charges in the accumulation region that reduces RON. The second mechanism is identified to account for the anomalous lower RON degradation.

AB - Anomalous hot-carrier degradation phenomenon was observed in a 0.5-μm 12-V n-type drain-extended MOS transistors (N-DEMOS) with various n-type drain-drift (NDD) implant dosage. Under the same stress condition, the device with a higher NDD dosage produces a higher substrate current, a slightly higher transconductance degradation, but a lower ON-resistance (RON) degradation. Two degradation mechanisms are identified from the analysis of the electrical data and two-dimensional device simulations. The first mechanism is hot-electron injection in the accumulation region near the junction of the channel and accumulation regions. The second mechanism is hot-hole injection in the accumulation region near the spacer. This injection of hot holes creates a positive-charge trapping in the gate oxide, resulting in negative mirror charges in the accumulation region that reduces RON. The second mechanism is identified to account for the anomalous lower RON degradation.

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JO - IEEE Transactions on Device and Materials Reliability

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ER -

Anomalous reduction of hot-carrier-induced ON-resistance degradation in n-type DEMOS transistors

Abstract

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