Anomalous temperature-dependent characteristics of silicon diffused resistors

Hung Ming Chuang, Sheng Fu Tsai, Kong Beng Thei, Wen-Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The temperature-dependent characteristics of silicon diffused resistors are demonstrated and studied. Based on the presence of a suicide/silicon junction, the device size plays an important role on diffused resistor behaviours. From experimental and theoretical analysis, some important parameters, e.g. the interface resistance (Rinterface), sheet resistance (Rbulk), deviations of resistor length (ΔL) and width (ΔW) are obtained. Also, anomalous phenomena of temperature coefficient of resistance (TCR) are found.

Original languageEnglish
Pages (from-to)1015-1016
Number of pages2
JournalElectronics Letters
Volume39
Issue number13
DOIs
Publication statusPublished - 2003 Jun 25

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Resistors
Silicon
Sheet resistance
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chuang, Hung Ming ; Tsai, Sheng Fu ; Thei, Kong Beng ; Liu, Wen-Chau. / Anomalous temperature-dependent characteristics of silicon diffused resistors. In: Electronics Letters. 2003 ; Vol. 39, No. 13. pp. 1015-1016.
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Anomalous temperature-dependent characteristics of silicon diffused resistors. / Chuang, Hung Ming; Tsai, Sheng Fu; Thei, Kong Beng; Liu, Wen-Chau.

In: Electronics Letters, Vol. 39, No. 13, 25.06.2003, p. 1015-1016.

Research output: Contribution to journalArticle

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