Anomalously large blueshift of donor-acceptor pair transition peak in GaAs/AlGaAs coupled quantum wells with low residual impurity densities

X. Mu; Y. J. Ding; D. Yang; J. B. Khurgin; K. W. Alt; K. L. Wang

Anomalously large blueshift of donor-acceptor pair transition peak in GaAs/AlGaAs coupled quantum wells with low residual impurity densities

X. Mu, Y. J. Ding, D. Yang, J. B. Khurgin, K. W. Alt, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

Abstract

The results on direct observation of an anomalously large blueshift as large as 12 meV in GaAs/AlGaAs quantum wells (QW) with low residual impurity densities are discussed. Due to the imperfections at the interfaces between GaAs and Al_0.25Ga_0.75As, the residual donors and acceptors are most likely trapped at the interfaces. When the sample temperature is increased to 40 K, the photoluminescence peak wavelength occurs at 791 nm. The energy of this peak is larger that the lowest energy of the donor-acceptor pair transition peak at 4 K by 17.6 meV.

Original language	English
Pages	125-126
Number of pages	2
Publication status	Published - 1999
Event	Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: 1999 May 23 → 1999 May 28

Conference

Conference	Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
City	Baltimore, MD, USA
Period	99-05-23 → 99-05-28

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Anomalously large blueshift of donor-acceptor pair transition peak in GaAs/AlGaAs coupled quantum wells with low residual impurity densities",

abstract = "The results on direct observation of an anomalously large blueshift as large as 12 meV in GaAs/AlGaAs quantum wells (QW) with low residual impurity densities are discussed. Due to the imperfections at the interfaces between GaAs and Al0.25Ga0.75As, the residual donors and acceptors are most likely trapped at the interfaces. When the sample temperature is increased to 40 K, the photoluminescence peak wavelength occurs at 791 nm. The energy of this peak is larger that the lowest energy of the donor-acceptor pair transition peak at 4 K by 17.6 meV.",

author = "X. Mu and Ding, \{Y. J.\} and D. Yang and Khurgin, \{J. B.\} and Alt, \{K. W.\} and Wang, \{K. L.\}",

year = "1999",

language = "English",

pages = "125--126",

note = "Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) ; Conference date: 23-05-1999 Through 28-05-1999",

}

Anomalously large blueshift of donor-acceptor pair transition peak in GaAs/AlGaAs coupled quantum wells with low residual impurity densities. / Mu, X.; Ding, Y. J.; Yang, D. et al.
1999. 125-126 Paper presented at Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99), Baltimore, MD, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Anomalously large blueshift of donor-acceptor pair transition peak in GaAs/AlGaAs coupled quantum wells with low residual impurity densities

AU - Mu, X.

AU - Ding, Y. J.

AU - Yang, D.

AU - Khurgin, J. B.

AU - Alt, K. W.

AU - Wang, K. L.

PY - 1999

Y1 - 1999

N2 - The results on direct observation of an anomalously large blueshift as large as 12 meV in GaAs/AlGaAs quantum wells (QW) with low residual impurity densities are discussed. Due to the imperfections at the interfaces between GaAs and Al0.25Ga0.75As, the residual donors and acceptors are most likely trapped at the interfaces. When the sample temperature is increased to 40 K, the photoluminescence peak wavelength occurs at 791 nm. The energy of this peak is larger that the lowest energy of the donor-acceptor pair transition peak at 4 K by 17.6 meV.

AB - The results on direct observation of an anomalously large blueshift as large as 12 meV in GaAs/AlGaAs quantum wells (QW) with low residual impurity densities are discussed. Due to the imperfections at the interfaces between GaAs and Al0.25Ga0.75As, the residual donors and acceptors are most likely trapped at the interfaces. When the sample temperature is increased to 40 K, the photoluminescence peak wavelength occurs at 791 nm. The energy of this peak is larger that the lowest energy of the donor-acceptor pair transition peak at 4 K by 17.6 meV.

UR - https://www.scopus.com/pages/publications/0032685331

UR - https://www.scopus.com/inward/citedby.url?scp=0032685331&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032685331

SP - 125

EP - 126

T2 - Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)

Y2 - 23 May 1999 through 28 May 1999

ER -

Anomalously large blueshift of donor-acceptor pair transition peak in GaAs/AlGaAs coupled quantum wells with low residual impurity densities

Abstract

Conference

All Science Journal Classification (ASJC) codes

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