Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

Pei Yu Chuang; Shu Hsuan Su; Cheong Wei Chong; Yi Fan Chen; Yu Heng Chou; Jung Chun Andrew Huang; Wei Chuan Chen; Cheng Maw Cheng; Ku Ding Tsuei; Chia Hsin Wang; Yaw Wen Yang; Yen Fa Liao; Shih Chang Weng; Jyh Fu Lee; Yi Kang Lan; Shen Lin Chang; Chi Hsuan Lee; Chih Kai Yang; Hai Lin Su; Yu Cheng Wu

doi:10.1039/c7ra08995c

Anti-site defect effect on the electronic structure of a Bi₂Te₃ topological insulator

Pei Yu Chuang, Shu Hsuan Su, Cheong Wei Chong, Yi Fan Chen, Yu Heng Chou, Jung Chun Andrew Huang, Wei Chuan Chen, Cheng Maw Cheng, Ku Ding Tsuei, Chia Hsin Wang, Yaw Wen Yang, Yen Fa Liao, Shih Chang Weng, Jyh Fu Lee, Yi Kang Lan, Shen Lin Chang, Chi Hsuan Lee, Chih Kai Yang, Hai Lin Su, Yu Cheng Wu

Department of Physics

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Tuning the Fermi level (E_F) in Bi₂Te₃ topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that E_F of Bi₂Te₃ thin films shifts systematically with the growth temperature (T_g). The key role that a Bi-on-Te(1) (Bi_Te1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L₃-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of E_F is due to the formation and suppression of Bi_Te1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.

Original language	English
Pages (from-to)	423-428
Number of pages	6
Journal	RSC Advances
Volume	8
Issue number	1
DOIs	https://doi.org/10.1039/c7ra08995c
Publication status	Published - 2018

All Science Journal Classification (ASJC) codes

General Chemistry
General Chemical Engineering

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10.1039/c7ra08995c

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Chuang, P. Y., Su, S. H., Chong, C. W., Chen, Y. F., Chou, Y. H., Huang, J. C. A., Chen, W. C., Cheng, C. M., Tsuei, K. D., Wang, C. H., Yang, Y. W., Liao, Y. F., Weng, S. C., Lee, J. F., Lan, Y. K., Chang, S. L., Lee, C. H., Yang, C. K., Su, H. L., & Wu, Y. C. (2018). Anti-site defect effect on the electronic structure of a Bi₂Te₃ topological insulator. RSC Advances, 8(1), 423-428. https://doi.org/10.1039/c7ra08995c

@article{1c786d6b2d0540698a6e5da2762f28f8,

title = "Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator",

abstract = "Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.",

author = "Chuang, {Pei Yu} and Su, {Shu Hsuan} and Chong, {Cheong Wei} and Chen, {Yi Fan} and Chou, {Yu Heng} and Huang, {Jung Chun Andrew} and Chen, {Wei Chuan} and Cheng, {Cheng Maw} and Tsuei, {Ku Ding} and Wang, {Chia Hsin} and Yang, {Yaw Wen} and Liao, {Yen Fa} and Weng, {Shih Chang} and Lee, {Jyh Fu} and Lan, {Yi Kang} and Chang, {Shen Lin} and Lee, {Chi Hsuan} and Yang, {Chih Kai} and Su, {Hai Lin} and Wu, {Yu Cheng}",

note = "Publisher Copyright: {\textcopyright} 2018 The Royal Society of Chemistry.",

year = "2018",

doi = "10.1039/c7ra08995c",

language = "English",

volume = "8",

pages = "423--428",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "1",

}

Chuang, PY, Su, SH, Chong, CW, Chen, YF, Chou, YH, Huang, JCA, Chen, WC, Cheng, CM, Tsuei, KD, Wang, CH, Yang, YW, Liao, YF, Weng, SC, Lee, JF, Lan, YK, Chang, SL, Lee, CH, Yang, CK, Su, HL & Wu, YC 2018, 'Anti-site defect effect on the electronic structure of a Bi₂Te₃ topological insulator', RSC Advances, vol. 8, no. 1, pp. 423-428. https://doi.org/10.1039/c7ra08995c

TY - JOUR

T1 - Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

AU - Chuang, Pei Yu

AU - Su, Shu Hsuan

AU - Chong, Cheong Wei

AU - Chen, Yi Fan

AU - Chou, Yu Heng

AU - Huang, Jung Chun Andrew

AU - Chen, Wei Chuan

AU - Cheng, Cheng Maw

AU - Tsuei, Ku Ding

AU - Wang, Chia Hsin

AU - Yang, Yaw Wen

AU - Liao, Yen Fa

AU - Weng, Shih Chang

AU - Lee, Jyh Fu

AU - Lan, Yi Kang

AU - Chang, Shen Lin

AU - Lee, Chi Hsuan

AU - Yang, Chih Kai

AU - Su, Hai Lin

AU - Wu, Yu Cheng

PY - 2018

Y1 - 2018

N2 - Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.

AB - Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.

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U2 - 10.1039/c7ra08995c

DO - 10.1039/c7ra08995c

M3 - Article

AN - SCOPUS:85040226422

SN - 2046-2069

VL - 8

SP - 423

EP - 428

JO - RSC Advances

JF - RSC Advances

IS - 1

ER -

Anti-site defect effect on the electronic structure of a Bi₂Te₃ topological insulator

Abstract

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