Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

Pei Yu Chuang, Shu Hsuan Su, Cheong Wei Chong, Yi Fan Chen, Yu Heng Chou, Jung Chun Andrew Huang, Wei Chuan Chen, Cheng Maw Cheng, Ku Ding Tsuei, Chia Hsin Wang, Yaw Wen Yang, Yen Fa Liao, Shih Chang Weng, Jyh Fu Lee, Yi Kang Lan, Shen Lin Chang, Chi Hsuan Lee, Chih Kai Yang, Hai Lin Su, Yu Cheng Wu

Research output: Contribution to journalArticle

Abstract

Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.

Original languageEnglish
Pages (from-to)423-428
Number of pages6
JournalRSC Advances
Volume8
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

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X ray absorption
Growth temperature
Electronic structure
Magnetoelectronics
Defects
Defect structures
Surface states
Photoemission
Fermi level
Molecular beam epitaxy
Electronic properties
Tuning
Thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Chuang, Pei Yu ; Su, Shu Hsuan ; Chong, Cheong Wei ; Chen, Yi Fan ; Chou, Yu Heng ; Huang, Jung Chun Andrew ; Chen, Wei Chuan ; Cheng, Cheng Maw ; Tsuei, Ku Ding ; Wang, Chia Hsin ; Yang, Yaw Wen ; Liao, Yen Fa ; Weng, Shih Chang ; Lee, Jyh Fu ; Lan, Yi Kang ; Chang, Shen Lin ; Lee, Chi Hsuan ; Yang, Chih Kai ; Su, Hai Lin ; Wu, Yu Cheng. / Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator. In: RSC Advances. 2018 ; Vol. 8, No. 1. pp. 423-428.
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abstract = "Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.",
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Chuang, PY, Su, SH, Chong, CW, Chen, YF, Chou, YH, Huang, JCA, Chen, WC, Cheng, CM, Tsuei, KD, Wang, CH, Yang, YW, Liao, YF, Weng, SC, Lee, JF, Lan, YK, Chang, SL, Lee, CH, Yang, CK, Su, HL & Wu, YC 2018, 'Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator', RSC Advances, vol. 8, no. 1, pp. 423-428. https://doi.org/10.1039/c7ra08995c

Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator. / Chuang, Pei Yu; Su, Shu Hsuan; Chong, Cheong Wei; Chen, Yi Fan; Chou, Yu Heng; Huang, Jung Chun Andrew; Chen, Wei Chuan; Cheng, Cheng Maw; Tsuei, Ku Ding; Wang, Chia Hsin; Yang, Yaw Wen; Liao, Yen Fa; Weng, Shih Chang; Lee, Jyh Fu; Lan, Yi Kang; Chang, Shen Lin; Lee, Chi Hsuan; Yang, Chih Kai; Su, Hai Lin; Wu, Yu Cheng.

In: RSC Advances, Vol. 8, No. 1, 01.01.2018, p. 423-428.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

AU - Chuang, Pei Yu

AU - Su, Shu Hsuan

AU - Chong, Cheong Wei

AU - Chen, Yi Fan

AU - Chou, Yu Heng

AU - Huang, Jung Chun Andrew

AU - Chen, Wei Chuan

AU - Cheng, Cheng Maw

AU - Tsuei, Ku Ding

AU - Wang, Chia Hsin

AU - Yang, Yaw Wen

AU - Liao, Yen Fa

AU - Weng, Shih Chang

AU - Lee, Jyh Fu

AU - Lan, Yi Kang

AU - Chang, Shen Lin

AU - Lee, Chi Hsuan

AU - Yang, Chih Kai

AU - Su, Hai Lin

AU - Wu, Yu Cheng

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.

AB - Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TI-based advanced electronic and spintronic devices.

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U2 - 10.1039/c7ra08995c

DO - 10.1039/c7ra08995c

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