Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors

Wen Chau Liu; Wen Lung Chang; Hsi Jen Pan; Kuo Hui Yu; Shung Ching Feng; Wen Shiung Lour

doi:10.1063/1.123725

Application of a new airbridge-gate structure for high-performance Ga_0.51In_0.49P/In_0.15Ga_0.85As/GaAs pseudomorphic field-effect transistors

Wen Chau Liu, Wen Lung Chang, Hsi Jen Pan, Kuo Hui Yu, Shung Ching Feng, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An airbridge-gate structure with multiple piers was used to create an efficient Ga_0.51In_0.49P/In_0.15Ga_0.85As/GaAs pseudomorphic heterostructure field-effect transistor (FET). The FET can simultaneously provide a high gate-to-drain breakdown voltage and broad and linear transconductance. Adopting the airbridge-gate technique hinders parasitic capacitance as well as show a wide and flat operation regime of the current gain frequency (f_T) and maximum oscillation frequency (f_max).

Original language	English
Pages (from-to)	1996-1998
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	14
DOIs	https://doi.org/10.1063/1.123725
Publication status	Published - 1999 Apr 5

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.123725

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title = "Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors",

abstract = "An airbridge-gate structure with multiple piers was used to create an efficient Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic heterostructure field-effect transistor (FET). The FET can simultaneously provide a high gate-to-drain breakdown voltage and broad and linear transconductance. Adopting the airbridge-gate technique hinders parasitic capacitance as well as show a wide and flat operation regime of the current gain frequency (fT) and maximum oscillation frequency (fmax).",

author = "Liu, {Wen Chau} and Chang, {Wen Lung} and Pan, {Hsi Jen} and Yu, {Kuo Hui} and Feng, {Shung Ching} and Lour, {Wen Shiung}",

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AU - Liu, Wen Chau

AU - Chang, Wen Lung

AU - Pan, Hsi Jen

AU - Yu, Kuo Hui

AU - Feng, Shung Ching

AU - Lour, Wen Shiung

PY - 1999/4/5

Y1 - 1999/4/5

N2 - An airbridge-gate structure with multiple piers was used to create an efficient Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic heterostructure field-effect transistor (FET). The FET can simultaneously provide a high gate-to-drain breakdown voltage and broad and linear transconductance. Adopting the airbridge-gate technique hinders parasitic capacitance as well as show a wide and flat operation regime of the current gain frequency (fT) and maximum oscillation frequency (fmax).

AB - An airbridge-gate structure with multiple piers was used to create an efficient Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic heterostructure field-effect transistor (FET). The FET can simultaneously provide a high gate-to-drain breakdown voltage and broad and linear transconductance. Adopting the airbridge-gate technique hinders parasitic capacitance as well as show a wide and flat operation regime of the current gain frequency (fT) and maximum oscillation frequency (fmax).

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SP - 1996

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ER -

Application of a new airbridge-gate structure for high-performance Ga_0.51In_0.49P/In_0.15Ga_0.85As/GaAs pseudomorphic field-effect transistors

Abstract

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