Application of a new airbridge-gate structure for high-performance Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As/GaAs pseudomorphic field-effect transistors

Wen-Chau Liu, Wen Lung Chang, Hsi Jen Pan, Kuo Hui Yu, Shung Ching Feng, Wen Shiung Lour

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

An airbridge-gate structure with multiple piers was used to create an efficient Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As/GaAs pseudomorphic heterostructure field-effect transistor (FET). The FET can simultaneously provide a high gate-to-drain breakdown voltage and broad and linear transconductance. Adopting the airbridge-gate technique hinders parasitic capacitance as well as show a wide and flat operation regime of the current gain frequency (f T ) and maximum oscillation frequency (f max ).

Original languageEnglish
Pages (from-to)1996-1998
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number14
DOIs
Publication statusPublished - 1999 Apr 5

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field effect transistors
wharves
transconductance
electrical faults
capacitance
oscillations

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Liu, Wen-Chau ; Chang, Wen Lung ; Pan, Hsi Jen ; Yu, Kuo Hui ; Feng, Shung Ching ; Lour, Wen Shiung. / Application of a new airbridge-gate structure for high-performance Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As/GaAs pseudomorphic field-effect transistors In: Applied Physics Letters. 1999 ; Vol. 74, No. 14. pp. 1996-1998.
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Application of a new airbridge-gate structure for high-performance Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As/GaAs pseudomorphic field-effect transistors . / Liu, Wen-Chau; Chang, Wen Lung; Pan, Hsi Jen; Yu, Kuo Hui; Feng, Shung Ching; Lour, Wen Shiung.

In: Applied Physics Letters, Vol. 74, No. 14, 05.04.1999, p. 1996-1998.

Research output: Contribution to journalArticle

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