Application of a triple-well superlattice emitter structure to GaAs switching device

Der Feng Guo; Wen-Chau Liu; Wen Shiung Lour; Chung Yih Sun; Rong Chau Liu

doi:10.1063/1.352207

Application of a triple-well superlattice emitter structure to GaAs switching device

Der Feng Guo, Wen-Chau Liu, Wen Shiung Lour, Chung Yih Sun, Rong Chau Liu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A new GaAs switching device with a triple-well superlattice emitter structure, prepared by molecular beam epitaxy, has been fabricated and demonstrated. An S- and N-shaped negative-differential-resistance (NDR) phenomenon, attributed primarily to the avalanche multiplications process and resonant-tunneling effect, were observed simultaneously when a proper collector-emitter voltage (V_CE) was applied. The operation temperature is known from the experimental results to play an important role on the influence of the NDR behaviors. A transistor action with a common-emitter current gain of over 36 was also achieved at 300 K when a control current was employed to the base electrode. This device exhibited a significantly regenerative switching phenomenon both at room temperature and low temperature if a -V_CE voltage was used. The proposed structure consequently has good potential for switching and quantum functional device applications.

Original language	English
Pages (from-to)	4414-4416
Number of pages	3
Journal	Journal of Applied Physics
Volume	72
Issue number	9
DOIs	https://doi.org/10.1063/1.352207
Publication status	Published - 1992 Dec 1

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.352207

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title = "Application of a triple-well superlattice emitter structure to GaAs switching device",

abstract = "A new GaAs switching device with a triple-well superlattice emitter structure, prepared by molecular beam epitaxy, has been fabricated and demonstrated. An S- and N-shaped negative-differential-resistance (NDR) phenomenon, attributed primarily to the avalanche multiplications process and resonant-tunneling effect, were observed simultaneously when a proper collector-emitter voltage (VCE) was applied. The operation temperature is known from the experimental results to play an important role on the influence of the NDR behaviors. A transistor action with a common-emitter current gain of over 36 was also achieved at 300 K when a control current was employed to the base electrode. This device exhibited a significantly regenerative switching phenomenon both at room temperature and low temperature if a -VCE voltage was used. The proposed structure consequently has good potential for switching and quantum functional device applications.",

author = "Guo, {Der Feng} and Wen-Chau Liu and Lour, {Wen Shiung} and Sun, {Chung Yih} and Liu, {Rong Chau}",

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T1 - Application of a triple-well superlattice emitter structure to GaAs switching device

AU - Guo, Der Feng

AU - Liu, Wen-Chau

AU - Lour, Wen Shiung

AU - Sun, Chung Yih

AU - Liu, Rong Chau

PY - 1992/12/1

Y1 - 1992/12/1

N2 - A new GaAs switching device with a triple-well superlattice emitter structure, prepared by molecular beam epitaxy, has been fabricated and demonstrated. An S- and N-shaped negative-differential-resistance (NDR) phenomenon, attributed primarily to the avalanche multiplications process and resonant-tunneling effect, were observed simultaneously when a proper collector-emitter voltage (VCE) was applied. The operation temperature is known from the experimental results to play an important role on the influence of the NDR behaviors. A transistor action with a common-emitter current gain of over 36 was also achieved at 300 K when a control current was employed to the base electrode. This device exhibited a significantly regenerative switching phenomenon both at room temperature and low temperature if a -VCE voltage was used. The proposed structure consequently has good potential for switching and quantum functional device applications.

AB - A new GaAs switching device with a triple-well superlattice emitter structure, prepared by molecular beam epitaxy, has been fabricated and demonstrated. An S- and N-shaped negative-differential-resistance (NDR) phenomenon, attributed primarily to the avalanche multiplications process and resonant-tunneling effect, were observed simultaneously when a proper collector-emitter voltage (VCE) was applied. The operation temperature is known from the experimental results to play an important role on the influence of the NDR behaviors. A transistor action with a common-emitter current gain of over 36 was also achieved at 300 K when a control current was employed to the base electrode. This device exhibited a significantly regenerative switching phenomenon both at room temperature and low temperature if a -VCE voltage was used. The proposed structure consequently has good potential for switching and quantum functional device applications.

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Application of a triple-well superlattice emitter structure to GaAs switching device

Abstract

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