TY - GEN
T1 - Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor
AU - Liu, W. C.
AU - Lour, W. S.
AU - Sun, C. Y.
AU - Lee, Y. S.
AU - Guo, D. F.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1991
Y1 - 1991
N2 - A novel functional resonant-tunneling bipolar transistor (RBT) has been fabricated and demonstrated. In the proposed device, electrons are injected from emitter to base by resonant- tunneling through the minibands in the i-AlGaAs/n+-GaAs superlattice. The main features of the proposed device is the significant double negative-differential-resistance (NDR). Two high peak-to-valley current ratios of 4:1 and 2.6:1 were obtained at 77 K. In the transistor operation, a common-emitter current gain of 60 and a collector offset voltage smaller than more than 0.2 V at 77 K were obtained. As control base current increases sufficiently to cause the base-emitter junction drop beyond flat-band condition, two different transistor action regions with smaller current gains of 38 and 35 are found, respectively. Furthermore, the first peak current is nearly equal to the second peak current and much larger than the second valley current. Therefore, it is attractive to exploit the device in multiple- valued logic circuits and frequency multiplier.
AB - A novel functional resonant-tunneling bipolar transistor (RBT) has been fabricated and demonstrated. In the proposed device, electrons are injected from emitter to base by resonant- tunneling through the minibands in the i-AlGaAs/n+-GaAs superlattice. The main features of the proposed device is the significant double negative-differential-resistance (NDR). Two high peak-to-valley current ratios of 4:1 and 2.6:1 were obtained at 77 K. In the transistor operation, a common-emitter current gain of 60 and a collector offset voltage smaller than more than 0.2 V at 77 K were obtained. As control base current increases sufficiently to cause the base-emitter junction drop beyond flat-band condition, two different transistor action regions with smaller current gains of 38 and 35 are found, respectively. Furthermore, the first peak current is nearly equal to the second peak current and much larger than the second valley current. Therefore, it is attractive to exploit the device in multiple- valued logic circuits and frequency multiplier.
UR - http://www.scopus.com/inward/record.url?scp=0026370813&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026370813&partnerID=8YFLogxK
U2 - 10.1117/12.47294
DO - 10.1117/12.47294
M3 - Conference contribution
AN - SCOPUS:0026370813
SN - 0819406465
SN - 9780819406460
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 670
EP - 674
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Publ by Int Soc for Optical Engineering
T2 - International Conference on Thin Film Physics and Applications - '91 TFPA
Y2 - 15 April 1991 through 17 April 1991
ER -