Abstract
A novel resonant-tunneling bipolar transistor employing i-AlGaAs/GaAs superlattice as a resonant tunneling emitteris discussed. It is found that the transistor exhibits not only high current gain but significant double negative-differential resistance. Due to excellent performance, the transistor can be used in multiple-valued circuits and frequency multipliers.
Original language | English |
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Pages (from-to) | 1078 |
Number of pages | 1 |
Journal | Vacuum |
Volume | 42 |
Issue number | 16 |
DOIs | |
Publication status | Published - 1991 |
Event | 1991 International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 1991 Apr 15 → 1991 Apr 17 |
All Science Journal Classification (ASJC) codes
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films