Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor

W. C. Liu; W. S. Lour; C. Y. Sun; Y. S. Lee; D. F. Guo

doi:10.1016/0042-207x(91)91402-a

Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor

W. C. Liu, W. S. Lour, C. Y. Sun, Y. S. Lee, D. F. Guo

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A novel resonant-tunneling bipolar transistor employing i-AlGaAs/GaAs superlattice as a resonant tunneling emitteris discussed. It is found that the transistor exhibits not only high current gain but significant double negative-differential resistance. Due to excellent performance, the transistor can be used in multiple-valued circuits and frequency multipliers.

Original language	English
Pages (from-to)	1078
Number of pages	1
Journal	Vacuum
Volume	42
Issue number	16
DOIs	https://doi.org/10.1016/0042-207x(91)91402-a
Publication status	Published - 1991
Event	1991 International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 1991 Apr 15 → 1991 Apr 17

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/0042-207x(91)91402-a

Cite this

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title = "Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor",

abstract = "A novel resonant-tunneling bipolar transistor employing i-AlGaAs/GaAs superlattice as a resonant tunneling emitteris discussed. It is found that the transistor exhibits not only high current gain but significant double negative-differential resistance. Due to excellent performance, the transistor can be used in multiple-valued circuits and frequency multipliers.",

author = "Liu, {W. C.} and Lour, {W. S.} and Sun, {C. Y.} and Lee, {Y. S.} and Guo, {D. F.}",

year = "1991",

doi = "10.1016/0042-207x(91)91402-a",

language = "English",

volume = "42",

pages = "1078",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

number = "16",

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TY - JOUR

T1 - Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor

AU - Liu, W. C.

AU - Lour, W. S.

AU - Sun, C. Y.

AU - Lee, Y. S.

AU - Guo, D. F.

PY - 1991

Y1 - 1991

N2 - A novel resonant-tunneling bipolar transistor employing i-AlGaAs/GaAs superlattice as a resonant tunneling emitteris discussed. It is found that the transistor exhibits not only high current gain but significant double negative-differential resistance. Due to excellent performance, the transistor can be used in multiple-valued circuits and frequency multipliers.

AB - A novel resonant-tunneling bipolar transistor employing i-AlGaAs/GaAs superlattice as a resonant tunneling emitteris discussed. It is found that the transistor exhibits not only high current gain but significant double negative-differential resistance. Due to excellent performance, the transistor can be used in multiple-valued circuits and frequency multipliers.

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UR - http://www.scopus.com/inward/citedby.url?scp=0025757772&partnerID=8YFLogxK

U2 - 10.1016/0042-207x(91)91402-a

DO - 10.1016/0042-207x(91)91402-a

M3 - Conference article

AN - SCOPUS:0025757772

SN - 0042-207X

VL - 42

SP - 1078

JO - Vacuum

JF - Vacuum

IS - 16

T2 - 1991 International Conference on Thin Film Physics and Applications

Y2 - 15 April 1991 through 17 April 1991

ER -

Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor

Abstract

All Science Journal Classification (ASJC) codes

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