Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor

W. C. Liu, W. S. Lour, C. Y. Sun, Y. S. Lee, D. F. Guo

Research output: Contribution to journalConference articlepeer-review


A novel resonant-tunneling bipolar transistor employing i-AlGaAs/GaAs superlattice as a resonant tunneling emitteris discussed. It is found that the transistor exhibits not only high current gain but significant double negative-differential resistance. Due to excellent performance, the transistor can be used in multiple-valued circuits and frequency multipliers.

Original languageEnglish
Pages (from-to)1078
Number of pages1
Issue number16
Publication statusPublished - 1991
Event1991 International Conference on Thin Film Physics and Applications - Shanghai, China
Duration: 1991 Apr 151991 Apr 17

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films


Dive into the research topics of 'Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor'. Together they form a unique fingerprint.

Cite this