A novel resonant-tunneling bipolar transistor employing i-AlGaAs/GaAs superlattice as a resonant tunneling emitteris discussed. It is found that the transistor exhibits not only high current gain but significant double negative-differential resistance. Due to excellent performance, the transistor can be used in multiple-valued circuits and frequency multipliers.
|Number of pages||1|
|Publication status||Published - 1991|
|Event||1991 International Conference on Thin Film Physics and Applications - Shanghai, China|
Duration: 1991 Apr 15 → 1991 Apr 17
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces, Coatings and Films