Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor

Wen Chau Liu; Der Feng Guo; Wen Shiung Lour

doi:10.1063/1.107563

Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor

Wen Chau Liu, Der Feng Guo, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A GaAs/AlGaAs double heterostructure-emitter bipolar transistor (DHEBT), prepared by molecular beam epitaxy, has been fabricated with improved performance. The employment of emitter edge-thinning technique has caused a significant suppression of the surface leakage current. A common-emitter current gain of up to 140 with a negligible collector offset voltage (∼40 mV) was obtained. The undesired knee-shaped characteristics and the reachthrough effect, always observed on the conventional double heterojunction bipolar transistor (DHBT), were eliminated. An interestingly bi-directional and three-terminal controlled switching phenomena may also be exhibited by this device. This gives a substantial flexibility in the device and circuit applications. The electrical performance is believed to be further improved with an adequate design to minimize the area difference between emitter-base (EB) and the base-collector (BC) junction.

Original language	English
Pages (from-to)	1441-1443
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	12
DOIs	https://doi.org/10.1063/1.107563
Publication status	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.107563

Cite this

@article{db4f6d65ffa74e0495e9ec0bfc72e434,

title = "Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor",

abstract = "A GaAs/AlGaAs double heterostructure-emitter bipolar transistor (DHEBT), prepared by molecular beam epitaxy, has been fabricated with improved performance. The employment of emitter edge-thinning technique has caused a significant suppression of the surface leakage current. A common-emitter current gain of up to 140 with a negligible collector offset voltage (∼40 mV) was obtained. The undesired knee-shaped characteristics and the reachthrough effect, always observed on the conventional double heterojunction bipolar transistor (DHBT), were eliminated. An interestingly bi-directional and three-terminal controlled switching phenomena may also be exhibited by this device. This gives a substantial flexibility in the device and circuit applications. The electrical performance is believed to be further improved with an adequate design to minimize the area difference between emitter-base (EB) and the base-collector (BC) junction.",

author = "Liu, {Wen Chau} and Guo, {Der Feng} and Lour, {Wen Shiung}",

year = "1992",

doi = "10.1063/1.107563",

language = "English",

volume = "61",

pages = "1441--1443",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor

AU - Liu, Wen Chau

AU - Guo, Der Feng

AU - Lour, Wen Shiung

PY - 1992

Y1 - 1992

N2 - A GaAs/AlGaAs double heterostructure-emitter bipolar transistor (DHEBT), prepared by molecular beam epitaxy, has been fabricated with improved performance. The employment of emitter edge-thinning technique has caused a significant suppression of the surface leakage current. A common-emitter current gain of up to 140 with a negligible collector offset voltage (∼40 mV) was obtained. The undesired knee-shaped characteristics and the reachthrough effect, always observed on the conventional double heterojunction bipolar transistor (DHBT), were eliminated. An interestingly bi-directional and three-terminal controlled switching phenomena may also be exhibited by this device. This gives a substantial flexibility in the device and circuit applications. The electrical performance is believed to be further improved with an adequate design to minimize the area difference between emitter-base (EB) and the base-collector (BC) junction.

AB - A GaAs/AlGaAs double heterostructure-emitter bipolar transistor (DHEBT), prepared by molecular beam epitaxy, has been fabricated with improved performance. The employment of emitter edge-thinning technique has caused a significant suppression of the surface leakage current. A common-emitter current gain of up to 140 with a negligible collector offset voltage (∼40 mV) was obtained. The undesired knee-shaped characteristics and the reachthrough effect, always observed on the conventional double heterojunction bipolar transistor (DHBT), were eliminated. An interestingly bi-directional and three-terminal controlled switching phenomena may also be exhibited by this device. This gives a substantial flexibility in the device and circuit applications. The electrical performance is believed to be further improved with an adequate design to minimize the area difference between emitter-base (EB) and the base-collector (BC) junction.

UR - http://www.scopus.com/inward/record.url?scp=36449001502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449001502&partnerID=8YFLogxK

U2 - 10.1063/1.107563

DO - 10.1063/1.107563

M3 - Article

AN - SCOPUS:36449001502

SN - 0003-6951

VL - 61

SP - 1441

EP - 1443

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this