@inproceedings{9abd3188ef8e42b2acf52cd11843406e,
title = "Application of chemical-mechanical polishing for planarizing a high-K nano-composite polyimide insulator used in organic thin film transistors",
abstract = "To solve the large leakage current of heavily blended nanocomposite (PI and nano-TiO2 particles) with high capacitance gate dielectric film, chemical-mechanical polishing (CMP) was used to planarize the interface between the PI-TiO2 nano-composite film and pentacene. The hysteresis effect in organic thin film transistors (OTFTs) with the polished nano-composite dielectric surface was reduced because less charge was trapped in the interface. In OTFTs with high capacitance and a smooth surface, the threshold voltage improved from -22 to -5V, the sub-threshold voltage decreased from 3.44 to 0.50 (V/dec.), the current on/off ratio increased from 1.6×106 to 3.53×108, and the mobility increased from 0.416 to 0.624 (cm2V-1s-1).",
author = "Lee, {Wen Hsi} and Wang, {Chun Chieh} and Ho, {J. C.}",
year = "2009",
month = dec,
day = "1",
doi = "10.1149/1.3116899",
language = "English",
isbn = "9781607680741",
series = "ECS Transactions",
number = "8",
pages = "73--79",
booktitle = "Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices",
edition = "8",
note = "Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",
}