Application of chemical-mechanical polishing for planarizing a high-K nano-composite polyimide insulator used in organic thin film transistors

Wen Hsi Lee, Chun Chieh Wang, J. C. Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To solve the large leakage current of heavily blended nanocomposite (PI and nano-TiO2 particles) with high capacitance gate dielectric film, chemical-mechanical polishing (CMP) was used to planarize the interface between the PI-TiO2 nano-composite film and pentacene. The hysteresis effect in organic thin film transistors (OTFTs) with the polished nano-composite dielectric surface was reduced because less charge was trapped in the interface. In OTFTs with high capacitance and a smooth surface, the threshold voltage improved from -22 to -5V, the sub-threshold voltage decreased from 3.44 to 0.50 (V/dec.), the current on/off ratio increased from 1.6×106 to 3.53×108, and the mobility increased from 0.416 to 0.624 (cm2V-1s-1).

Original languageEnglish
Title of host publicationNanocrystal Embedded Dielectrics for Electronic and Photonic Devices
PublisherElectrochemical Society Inc.
Pages73-79
Number of pages7
Edition8
ISBN (Electronic)9781566777247
ISBN (Print)9781607680741
DOIs
Publication statusPublished - 2009

Publication series

NameECS Transactions
Number8
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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