Abstract
In this paper, extremely high potential barrier height and gate turn-on voltage in an n+/p+/n+/p+/n GaAs field-effect transistor employing double camel-like gate structures are demonstrated. The gate potential barrier height of the double camel-like gate is substantially enhanced by the addition of another n+/p + layer in the gate region, as compared with the conventional n +/p+/n single camel-like gate structure. The influence of gate structure layers on the depletion depth, potential barrier height, transconductance and gate voltage swing are addressed. Experimental results show that a relatively high gate turn-on voltage up to +4.9 V is realized because two reverse-biased junctions of the double camel-like gate structures absorb part of the positive gate voltage. In addition, an extremely broad gate voltage swing greater than 4.6 V with the transconductance above 100 mS mm -1 is observed. These results indicate that the studied device is suitable for linear and signal amplifiers and inverter circuit applications.
Original language | English |
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Article number | 026 |
Pages (from-to) | 1132-1138 |
Number of pages | 7 |
Journal | Semiconductor Science and Technology |
Volume | 21 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2006 Aug 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry