Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage

Jung Hui Tsai, Shao Yen Chiu, Wen Shiung Lour, Der Feng Guo, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this paper, extremely high potential barrier height and gate turn-on voltage in an n+/p+/n+/p+/n GaAs field-effect transistor employing double camel-like gate structures are demonstrated. The gate potential barrier height of the double camel-like gate is substantially enhanced by the addition of another n+/p + layer in the gate region, as compared with the conventional n +/p+/n single camel-like gate structure. The influence of gate structure layers on the depletion depth, potential barrier height, transconductance and gate voltage swing are addressed. Experimental results show that a relatively high gate turn-on voltage up to +4.9 V is realized because two reverse-biased junctions of the double camel-like gate structures absorb part of the positive gate voltage. In addition, an extremely broad gate voltage swing greater than 4.6 V with the transconductance above 100 mS mm -1 is observed. These results indicate that the studied device is suitable for linear and signal amplifiers and inverter circuit applications.

Original languageEnglish
Article number026
Pages (from-to)1132-1138
Number of pages7
JournalSemiconductor Science and Technology
Volume21
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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