@inproceedings{19217a681f9a4eeb834ee280df82d37b,
title = "Application of GaN E-HEMT to Reaction Wheel Motor Drive",
abstract = "This work proposes a simulation-aided design method for high switching frequency of GaN E-HEMT inverters. In order to test the effect of lower on-resistance of GaN E-HEMT, the half-bridge circuit was developed, and applied to the reaction wheel motor drive. By the test result, the GaN E-HEMT drive circuit without the reverse diode consumes less energy than that of Si- and SiC-based MOSFET for a prescribed speed range at room condition.",
author = "David Lwo and Hsieh, \{Min Fu\} and Kuo, \{Yen Kai\} and Lu, \{Xue Pin\} and Chan, \{Chen Lin\} and Hsu, \{Chih Chao\}",
note = "Publisher Copyright: {\textcopyright} 2024 The Institute of Electrical Engineers of Japan.; 27th International Conference on Electrical Machines and Systems, ICEMS 2024 ; Conference date: 26-11-2024 Through 29-11-2024",
year = "2024",
doi = "10.23919/ICEMS60997.2024.10921394",
language = "English",
series = "2024 27th International Conference on Electrical Machines and Systems, ICEMS 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "519--523",
booktitle = "2024 27th International Conference on Electrical Machines and Systems, ICEMS 2024",
address = "United States",
}