Application of modified transmission line model to measure p -type GaN contact

N. C. Chen, C. Y. Tseng, A. P. Chiu, C. F. Shih, P. H. Chang

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15 Citations (Scopus)


This work presented a procedure for extending the modified transmission line model to measure non-ohmic contact. This method was applied to the p -type GaN contact with the resulting sheet resistance similar to that determined by the Hall measurement. The voltage-current density (V-J) curve obtained using this procedure was also similar to that by directly analyzing the current-voltage curve of a light-emitting diode. Both results revealed the validity of this procedure. Rather than yielding a specific contact resistance for an ohmic contact, this procedure yielded a V-J curve to describe the non-ohmic contact characteristics. Similarly, this procedure could also extend the linear transmission line model to the analysis of non-ohmic contacts.

Original languageEnglish
Pages (from-to)6086-6088
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2004 Dec 20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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