Application of nanoimprinting technology to organic field-effect transistors

Wei Yang Chou; Ming Hua Chang; Horng Long Cheng; Shih Po Yu; Yung Chun Lee; Cheng Yu Chiu; Chung Yi Lee; Dun Ying Shu

doi:10.1063/1.3328100

Application of nanoimprinting technology to organic field-effect transistors

Wei Yang Chou, Ming Hua Chang, Horng Long Cheng, Shih Po Yu, Yung Chun Lee, Cheng Yu Chiu, Chung Yi Lee, Dun Ying Shu

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm² /V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.

Original language	English
Article number	083305
Journal	Applied Physics Letters
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.3328100
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3328100

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title = "Application of nanoimprinting technology to organic field-effect transistors",

abstract = "The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm2 /V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.",

author = "Chou, {Wei Yang} and Chang, {Ming Hua} and Cheng, {Horng Long} and Yu, {Shih Po} and Lee, {Yung Chun} and Chiu, {Cheng Yu} and Lee, {Chung Yi} and Shu, {Dun Ying}",

note = "Funding Information: This work was supported by the National Science Council, Taiwan, through Grant Nos. NSC 96-2112-M-006-015-MY3 and NSC 97-3114-M-006-001. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

year = "2010",

doi = "10.1063/1.3328100",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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AU - Chou, Wei Yang

AU - Chang, Ming Hua

AU - Cheng, Horng Long

AU - Yu, Shih Po

AU - Lee, Yung Chun

AU - Chiu, Cheng Yu

AU - Lee, Chung Yi

AU - Shu, Dun Ying

N1 - Funding Information: This work was supported by the National Science Council, Taiwan, through Grant Nos. NSC 96-2112-M-006-015-MY3 and NSC 97-3114-M-006-001. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010

Y1 - 2010

N2 - The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm2 /V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.

AB - The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm2 /V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.

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Application of nanoimprinting technology to organic field-effect transistors

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