Application of nanoimprinting technology to organic field-effect transistors

Wei Yang Chou, Ming Hua Chang, Horng Long Cheng, Shih Po Yu, Yung Chun Lee, Cheng Yu Chiu, Chung Yi Lee, Dun Ying Shu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm2 /V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.

Original languageEnglish
Article number083305
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 2010 Mar 12

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organic semiconductors
field effect transistors
charge carriers
microelectronics
integrated circuits
lithography

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chou, Wei Yang ; Chang, Ming Hua ; Cheng, Horng Long ; Yu, Shih Po ; Lee, Yung Chun ; Chiu, Cheng Yu ; Lee, Chung Yi ; Shu, Dun Ying. / Application of nanoimprinting technology to organic field-effect transistors. In: Applied Physics Letters. 2010 ; Vol. 96, No. 8.
@article{e9f224ebc98d45dd980d74956fe9dbbf,
title = "Application of nanoimprinting technology to organic field-effect transistors",
abstract = "The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm2 /V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.",
author = "Chou, {Wei Yang} and Chang, {Ming Hua} and Cheng, {Horng Long} and Yu, {Shih Po} and Lee, {Yung Chun} and Chiu, {Cheng Yu} and Lee, {Chung Yi} and Shu, {Dun Ying}",
year = "2010",
month = "3",
day = "12",
doi = "10.1063/1.3328100",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

Application of nanoimprinting technology to organic field-effect transistors. / Chou, Wei Yang; Chang, Ming Hua; Cheng, Horng Long; Yu, Shih Po; Lee, Yung Chun; Chiu, Cheng Yu; Lee, Chung Yi; Shu, Dun Ying.

In: Applied Physics Letters, Vol. 96, No. 8, 083305, 12.03.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Application of nanoimprinting technology to organic field-effect transistors

AU - Chou, Wei Yang

AU - Chang, Ming Hua

AU - Cheng, Horng Long

AU - Yu, Shih Po

AU - Lee, Yung Chun

AU - Chiu, Cheng Yu

AU - Lee, Chung Yi

AU - Shu, Dun Ying

PY - 2010/3/12

Y1 - 2010/3/12

N2 - The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm2 /V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.

AB - The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm2 /V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=77749292117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77749292117&partnerID=8YFLogxK

U2 - 10.1063/1.3328100

DO - 10.1063/1.3328100

M3 - Article

AN - SCOPUS:77749292117

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 083305

ER -