Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

Wen Shiung Lour, Wen Lung Chang, Wen Chau Liu, Yung Hsin Shie, Hsi Jen Pan, Jing Yuh Chen, Wei Chou Wang

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21 Citations (Scopus)

Abstract

A novel Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic high electron-mobility transistors with a GaAs delta sheet were fabricated. High selective etching between the active channel and GaInP confinement layers was employed to eliminate mesa sidewalls underneath the gate feeder. The selective removal of mesa sidewalls offered a simple and low-cost alternative way to obtain the high breakdown phenomenon. Good dc and ac linearity was achieved with a very high breakdown voltage over 40 V. The measured transconductance, cut-off frequency, and maximum oscillation frequency are 90 mS/mm, 12 and 28.4 GHz, respectively.

Original languageEnglish
Pages (from-to)2155-2157
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number15
DOIs
Publication statusPublished - 1999 Apr 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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