TY - GEN
T1 - Applications of admittance spectroscopy in photovoltaic devices beyond majority-carrier trapping defects
AU - Li, Jian V.
AU - Crandall, Richard S.
AU - Repins, Ingrid L.
AU - Nardes, Alexandre M.
AU - Levi, Dean H.
PY - 2011
Y1 - 2011
N2 - Admittance spectroscopy is commonly used to characterize majority-carrier trapping defects. In today's practical photovoltaic devices, however, a number of other physical mechanisms may contribute to the admittance measurement and interfere with the data interpretation. Such challenges arise due to the violation of basic assumptions of conventional admittance spectroscopy such as single-junction, ohmic contact, highly conductive absorbers, and measurement in reverse bias. We exploit such violations to devise admittance spectroscopy-based methods for studying the respective origins of "interference": majority-carrier mobility, non-ohmic contact potential barrier, minority-carrier inversion at heterointerface, and minority-carrier lifetime in a device environment. These methods are applied to a variety of photovoltaic technologies: CdTe, Cu(In, Ga)Se 2, Si HIT cells, and organic photovoltaic materials.
AB - Admittance spectroscopy is commonly used to characterize majority-carrier trapping defects. In today's practical photovoltaic devices, however, a number of other physical mechanisms may contribute to the admittance measurement and interfere with the data interpretation. Such challenges arise due to the violation of basic assumptions of conventional admittance spectroscopy such as single-junction, ohmic contact, highly conductive absorbers, and measurement in reverse bias. We exploit such violations to devise admittance spectroscopy-based methods for studying the respective origins of "interference": majority-carrier mobility, non-ohmic contact potential barrier, minority-carrier inversion at heterointerface, and minority-carrier lifetime in a device environment. These methods are applied to a variety of photovoltaic technologies: CdTe, Cu(In, Ga)Se 2, Si HIT cells, and organic photovoltaic materials.
UR - http://www.scopus.com/inward/record.url?scp=84861023213&partnerID=8YFLogxK
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U2 - 10.1109/PVSC.2011.6185849
DO - 10.1109/PVSC.2011.6185849
M3 - Conference contribution
AN - SCOPUS:84861023213
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 75
EP - 78
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -