Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors

Wen Chau Liu, Hsi Jen Pan, Shiou Ying Cheng, Wei Chou Wang, Jing Yuh Chen, Shun Ching Feng, Kuo Hui Yu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A significant continuous conduction band (CCB) heterointerface can be achieved by using the compositional variation on ΔEC of the In1-x-yGaxAlyAs/InP material system. A new In0.53Ga0.25Al0.22As/InP heterojunction bipolar transistor (HBT) was fabricated based on this technique. The dc characteristics exhibit good performances of lower offset voltage, higher breakdown voltage, and lower output conductance. Furthermore, a current gain about 4 is obtained at an ultralow current regime (IC≤5 nA). This proves that the studied device can be operated under a very wide current regime and its applicable for various circuit applications.

Original languageEnglish
Pages (from-to)572-574
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 1999 Jul 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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