A significant continuous conduction band (CCB) heterointerface can be achieved by using the compositional variation on ΔEC of the In1-x-yGaxAlyAs/InP material system. A new In0.53Ga0.25Al0.22As/InP heterojunction bipolar transistor (HBT) was fabricated based on this technique. The dc characteristics exhibit good performances of lower offset voltage, higher breakdown voltage, and lower output conductance. Furthermore, a current gain about 4 is obtained at an ultralow current regime (IC≤5 nA). This proves that the studied device can be operated under a very wide current regime and its applicable for various circuit applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)