Applications of GaAs grade-period doping superlattice for negative-differential-resistance device

W. C. Liu, C. Y. Sun, W. S. Lour, D. F. Guo, Y. S. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The characteristics of a GaAs graded-period δ-doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state avalanche multiplication process, i.e., a middle quasi-stable region is seen at 77 K. Finally, there is an interesting hysteresis phenomenon due to the trapped holes created by the avalanche multiplications. The significant control voltage ratio, Vs/VH, of the studied structure introduces a good potential for application on the switching field.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages640-644
Number of pages5
Editionpt 2
ISBN (Print)0819406465, 9780819406460
DOIs
Publication statusPublished - 1991
EventInternational Conference on Thin Film Physics and Applications - '91 TFPA - Shanghai, China
Duration: 1991 Apr 151991 Apr 17

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Numberpt 2
Volume1519
ISSN (Print)0277-786X

Other

OtherInternational Conference on Thin Film Physics and Applications - '91 TFPA
CityShanghai, China
Period91-04-1591-04-17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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