Applications of GaAs graded-period doping superlattice for negative-differential-resistance device

W. C. Liu; C. Y. Sun; W. S. Lour; D. F. Guo; Y. S. Lee

doi:10.1016/0042-207x(91)91315-f

Applications of GaAs graded-period doping superlattice for negative-differential-resistance device

W. C. Liu, C. Y. Sun, W. S. Lour, D. F. Guo, Y. S. Lee

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electric properties of a new graded-period doping superlattice are studied. A novel negative differential resistance (NDR) performance, due to the avalanche multiplications in a graded superlattice is demonstrated. The properties may provide a good potential for switching circuit applications.

Original language	English
Pages (from-to)	1055
Number of pages	1
Journal	Vacuum
Volume	42
Issue number	16
DOIs	https://doi.org/10.1016/0042-207x(91)91315-f
Publication status	Published - 1991
Event	1991 International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 1991 Apr 15 → 1991 Apr 17

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/0042-207x(91)91315-f

Cite this

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title = "Applications of GaAs graded-period doping superlattice for negative-differential-resistance device",

abstract = "The electric properties of a new graded-period doping superlattice are studied. A novel negative differential resistance (NDR) performance, due to the avalanche multiplications in a graded superlattice is demonstrated. The properties may provide a good potential for switching circuit applications.",

author = "Liu, {W. C.} and Sun, {C. Y.} and Lour, {W. S.} and Guo, {D. F.} and Lee, {Y. S.}",

year = "1991",

doi = "10.1016/0042-207x(91)91315-f",

language = "English",

volume = "42",

pages = "1055",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

number = "16",

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TY - JOUR

T1 - Applications of GaAs graded-period doping superlattice for negative-differential-resistance device

AU - Liu, W. C.

AU - Sun, C. Y.

AU - Lour, W. S.

AU - Guo, D. F.

AU - Lee, Y. S.

PY - 1991

Y1 - 1991

N2 - The electric properties of a new graded-period doping superlattice are studied. A novel negative differential resistance (NDR) performance, due to the avalanche multiplications in a graded superlattice is demonstrated. The properties may provide a good potential for switching circuit applications.

AB - The electric properties of a new graded-period doping superlattice are studied. A novel negative differential resistance (NDR) performance, due to the avalanche multiplications in a graded superlattice is demonstrated. The properties may provide a good potential for switching circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0025759473&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025759473&partnerID=8YFLogxK

U2 - 10.1016/0042-207x(91)91315-f

DO - 10.1016/0042-207x(91)91315-f

M3 - Conference article

AN - SCOPUS:0025759473

SN - 0042-207X

VL - 42

SP - 1055

JO - Vacuum

JF - Vacuum

IS - 16

T2 - 1991 International Conference on Thin Film Physics and Applications

Y2 - 15 April 1991 through 17 April 1991

ER -

Applications of GaAs graded-period doping superlattice for negative-differential-resistance device

Abstract

All Science Journal Classification (ASJC) codes

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