Applications of GaAs graded-period doping superlattice for negative-differential-resistance device

W. C. Liu, C. Y. Sun, W. S. Lour, D. F. Guo, Y. S. Lee

Research output: Contribution to journalConference article

Abstract

The electric properties of a new graded-period doping superlattice are studied. A novel negative differential resistance (NDR) performance, due to the avalanche multiplications in a graded superlattice is demonstrated. The properties may provide a good potential for switching circuit applications.

Original languageEnglish
Number of pages1
JournalVacuum
Volume42
Issue number16
Publication statusPublished - 1991 Jan 1
Event1991 International Conference on Thin Film Physics and Applications - Shanghai, China
Duration: 1991 Apr 151991 Apr 17

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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