Applications of transparent Al-doped ZnO contact on GaN-based power LED

C. J. Tun, J. K. Sheu, B. J. Pong, M. L. Lee, M. Y. Lee, C. K. Hsieh, C. C. Hu, G. C. Chi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this study, ZnO:Al(AZO) Ni/AZO and NiOx/AZO films were deposited on p-type GaN films followed by thermal annealing to form Ohmic contacts. After thermal annealing, the resistivities reduced from 5×10-3 to 4.4×10-4Ω-cm, 2.6×10-3Ω-cm, and 1.1×10-3Ω-cm for AZO, Ni/AZO, and NiOx/AZO films, respectively. The Ohmic characteristic could be highly improved after inserting Ni and NiOx between AZO and p-GaN. Both the Ni/AZO and NiOx/AZO contacts exhibit Ohmic characteristic after annealed at 800°C in N2 ambient. The light transmittance of Ni/AZO and NiOx/AZO films were higher than 80% in the range of 380-700nm after the 800°C -annealing treatment. In addition, we fabricated InGaN/GaN MQW LEDs with a dimension of 1×1mm 2 using the transparent Ni/AZO and NiO2/AZO Ohmic contact as a current spreading layer for p-GaN in order to increase the light extrication efficiency. For the LED with Ni/AZO contact, the light output approach to saturation when the injection current was about 400mA. But the light output still doesn't approach to saturation when the injection current was 500mA for the LED with NiOx/AZO contact. This may be due to that the resistivity of Ni/AZO was higher than that of NiOx/A2O and exhibit more heavy current clouding effect. The increasing of resistivity may be due to the interdiffusion of Ni into AZO. Comparing to GaN LED with Ni/Au ohmic contact, the light output intensity of LEDs with Ni/AZO and NiOx/AZO contacts was increased by 41% and 60% at 350mA, respectively.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices
DOIs
Publication statusPublished - 2006 May 24
EventGallium Nitride Materials and Devices - San Jose, CA, United States
Duration: 2006 Jan 232006 Jan 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6121
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices
CountryUnited States
CitySan Jose, CA
Period06-01-2306-01-25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Tun, C. J., Sheu, J. K., Pong, B. J., Lee, M. L., Lee, M. Y., Hsieh, C. K., Hu, C. C., & Chi, G. C. (2006). Applications of transparent Al-doped ZnO contact on GaN-based power LED. In Gallium Nitride Materials and Devices [61210X] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6121). https://doi.org/10.1117/12.647123