Approaching Defect-free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric

Shu Ju Tsai, Chiang Lun Wang, Hung Chun Lee, Chun Yeh Lin, Jhih Wei Chen, Hong Wei Shiu, Lo Yueh Chang, Han Ting Hsueh, Hung Ying Chen, Jyun Yu Tsai, Ying Hsin Lu, Ting Chang Chang, Li Wei Tu, Hsisheng Teng, Yi Chun Chen, Chia Hao Chen, Chung Lin Wu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiO x insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si 3 N 4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si 3 N 4 deposited using the plasma-Assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si 3 N 4 /Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si 3 N 4 /Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

Original languageEnglish
Article number28326
JournalScientific reports
Volume6
DOIs
Publication statusPublished - 2016 Jun 21

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atomic beams
silicon nitrides
amorphous silicon
insulators
defects
transport properties
silicon compounds
ultrahigh vacuum
energy bands
metal oxides
heterojunctions
leakage
transistors
breakdown
permittivity
luminescence
electronic structure
valence
metals

All Science Journal Classification (ASJC) codes

  • General

Cite this

Tsai, Shu Ju ; Wang, Chiang Lun ; Lee, Hung Chun ; Lin, Chun Yeh ; Chen, Jhih Wei ; Shiu, Hong Wei ; Chang, Lo Yueh ; Hsueh, Han Ting ; Chen, Hung Ying ; Tsai, Jyun Yu ; Lu, Ying Hsin ; Chang, Ting Chang ; Tu, Li Wei ; Teng, Hsisheng ; Chen, Yi Chun ; Chen, Chia Hao ; Wu, Chung Lin. / Approaching Defect-free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric. In: Scientific reports. 2016 ; Vol. 6.
@article{a0b81690fafb4d1694e868abfa7f94b4,
title = "Approaching Defect-free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric",
abstract = "In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiO x insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si 3 N 4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si 3 N 4 deposited using the plasma-Assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si 3 N 4 /Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si 3 N 4 /Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.",
author = "Tsai, {Shu Ju} and Wang, {Chiang Lun} and Lee, {Hung Chun} and Lin, {Chun Yeh} and Chen, {Jhih Wei} and Shiu, {Hong Wei} and Chang, {Lo Yueh} and Hsueh, {Han Ting} and Chen, {Hung Ying} and Tsai, {Jyun Yu} and Lu, {Ying Hsin} and Chang, {Ting Chang} and Tu, {Li Wei} and Hsisheng Teng and Chen, {Yi Chun} and Chen, {Chia Hao} and Wu, {Chung Lin}",
year = "2016",
month = "6",
day = "21",
doi = "10.1038/srep28326",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

Tsai, SJ, Wang, CL, Lee, HC, Lin, CY, Chen, JW, Shiu, HW, Chang, LY, Hsueh, HT, Chen, HY, Tsai, JY, Lu, YH, Chang, TC, Tu, LW, Teng, H, Chen, YC, Chen, CH & Wu, CL 2016, 'Approaching Defect-free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric', Scientific reports, vol. 6, 28326. https://doi.org/10.1038/srep28326

Approaching Defect-free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric. / Tsai, Shu Ju; Wang, Chiang Lun; Lee, Hung Chun; Lin, Chun Yeh; Chen, Jhih Wei; Shiu, Hong Wei; Chang, Lo Yueh; Hsueh, Han Ting; Chen, Hung Ying; Tsai, Jyun Yu; Lu, Ying Hsin; Chang, Ting Chang; Tu, Li Wei; Teng, Hsisheng; Chen, Yi Chun; Chen, Chia Hao; Wu, Chung Lin.

In: Scientific reports, Vol. 6, 28326, 21.06.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Approaching Defect-free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric

AU - Tsai, Shu Ju

AU - Wang, Chiang Lun

AU - Lee, Hung Chun

AU - Lin, Chun Yeh

AU - Chen, Jhih Wei

AU - Shiu, Hong Wei

AU - Chang, Lo Yueh

AU - Hsueh, Han Ting

AU - Chen, Hung Ying

AU - Tsai, Jyun Yu

AU - Lu, Ying Hsin

AU - Chang, Ting Chang

AU - Tu, Li Wei

AU - Teng, Hsisheng

AU - Chen, Yi Chun

AU - Chen, Chia Hao

AU - Wu, Chung Lin

PY - 2016/6/21

Y1 - 2016/6/21

N2 - In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiO x insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si 3 N 4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si 3 N 4 deposited using the plasma-Assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si 3 N 4 /Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si 3 N 4 /Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

AB - In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiO x insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si 3 N 4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si 3 N 4 deposited using the plasma-Assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si 3 N 4 /Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si 3 N 4 /Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

UR - http://www.scopus.com/inward/record.url?scp=84975883901&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975883901&partnerID=8YFLogxK

U2 - 10.1038/srep28326

DO - 10.1038/srep28326

M3 - Article

AN - SCOPUS:84975883901

VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 28326

ER -