Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

Shi Hao Guol; H. W. Huang; C. S. Lin; J. K. Sheu; C. J. Tin; C. H. Kuo; Jin Wei Shi

doi:10.1117/12.808713

Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

Shi Hao Guol, H. W. Huang, C. S. Lin, J. K. Sheu, C. J. Tin, C. H. Kuo, Jin Wei Shi

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of In_xGa _1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

Original language	English
Article number	721629
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7216
DOIs	https://doi.org/10.1117/12.808713
Publication status	Published - 2009
Event	Gallium Nitride Materials and Devices IV - San Jose, CA, United States Duration: 2009 Jan 26 → 2009 Jan 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.808713

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title = "Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes",

abstract = "In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa 1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.",

author = "Guol, {Shi Hao} and Huang, {H. W.} and Lin, {C. S.} and Sheu, {J. K.} and Tin, {C. J.} and Kuo, {C. H.} and Shi, {Jin Wei}",

year = "2009",

doi = "10.1117/12.808713",

language = "English",

volume = "7216",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Gallium Nitride Materials and Devices IV ; Conference date: 26-01-2009 Through 29-01-2009",

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TY - JOUR

T1 - Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

AU - Guol, Shi Hao

AU - Huang, H. W.

AU - Lin, C. S.

AU - Sheu, J. K.

AU - Tin, C. J.

AU - Kuo, C. H.

AU - Shi, Jin Wei

PY - 2009

Y1 - 2009

N2 - In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa 1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

AB - In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa 1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 721629

T2 - Gallium Nitride Materials and Devices IV

Y2 - 26 January 2009 through 29 January 2009

ER -

Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

Abstract

All Science Journal Classification (ASJC) codes

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