Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

Shi Hao Guol, H. W. Huang, C. S. Lin, Jinn-Kong Sheu, C. J. Tin, C. H. Kuo, Jin Wei Shi

Research output: Contribution to journalConference articlepeer-review


In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of In x Ga 1-x N/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

Original languageEnglish
Article number721629
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2009 May 5
EventGallium Nitride Materials and Devices IV - San Jose, CA, United States
Duration: 2009 Jan 262009 Jan 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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