Assessment of novel phase change memory programming techniques

Yi Bo Liao, Jun Tin Lin, Meng-Hsueh Chiang, Wei-Chou Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we present novel phase change memory programming techniques achieving low power operation without compromising performance by using proper pulsing schemes. By applying continuous current pulses at a fixed frequency or with the same pulse magnitude, binary data are successfully written into memory cells. The proposed programming techniques can be implemented with more flexible or simplified circuitry since a single current level is shown to be sufficient for write operations of both set and reset states.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 2008 Dec 82008 Dec 10

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period08-12-0808-12-10

Fingerprint

Phase change memory
Computer programming
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Liao, Y. B., Lin, J. T., Chiang, M-H., & Hsu, W-C. (2008). Assessment of novel phase change memory programming techniques. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC [4760662] https://doi.org/10.1109/EDSSC.2008.4760662
Liao, Yi Bo ; Lin, Jun Tin ; Chiang, Meng-Hsueh ; Hsu, Wei-Chou. / Assessment of novel phase change memory programming techniques. 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008.
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Liao, YB, Lin, JT, Chiang, M-H & Hsu, W-C 2008, Assessment of novel phase change memory programming techniques. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760662, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08-12-08. https://doi.org/10.1109/EDSSC.2008.4760662

Assessment of novel phase change memory programming techniques. / Liao, Yi Bo; Lin, Jun Tin; Chiang, Meng-Hsueh; Hsu, Wei-Chou.

2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760662.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Liao YB, Lin JT, Chiang M-H, Hsu W-C. Assessment of novel phase change memory programming techniques. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760662 https://doi.org/10.1109/EDSSC.2008.4760662