Assessment of structure variation in silicon nanowire FETs and impact on SRAM

Yi Bo Liao; Meng Hsueh Chiang; Keunwoo Kim; Wei Chou Hsu

doi:10.1016/j.mejo.2011.12.002

Assessment of structure variation in silicon nanowire FETs and impact on SRAM

Yi Bo Liao, Meng Hsueh Chiang, Keunwoo Kim, Wei Chou Hsu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study.

Original language	English
Pages (from-to)	300-304
Number of pages	5
Journal	Microelectronics Journal
Volume	43
Issue number	5
DOIs	https://doi.org/10.1016/j.mejo.2011.12.002
Publication status	Published - 2012 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2011.12.002

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abstract = "Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study.",

author = "Liao, {Yi Bo} and Chiang, {Meng Hsueh} and Keunwoo Kim and Hsu, {Wei Chou}",

note = "Funding Information: Authors would like to thank the National Science Council of Taiwan for financial support under contract NSC100-2628-E-197-003-MY2 and National Center for High-performance Computing ( NCHC ) for technical support. ",

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AU - Liao, Yi Bo

AU - Chiang, Meng Hsueh

AU - Kim, Keunwoo

AU - Hsu, Wei Chou

N1 - Funding Information: Authors would like to thank the National Science Council of Taiwan for financial support under contract NSC100-2628-E-197-003-MY2 and National Center for High-performance Computing ( NCHC ) for technical support.

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N2 - Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study.

AB - Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study.

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JF - Microelectronics Journal

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ER -

Assessment of structure variation in silicon nanowire FETs and impact on SRAM

Abstract

All Science Journal Classification (ASJC) codes

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