Assessment of structure variation in silicon nanowire FETs and impact on SRAM

Yi Bo Liao, Meng Hsueh Chiang, Keunwoo Kim, Wei Chou Hsu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study.

Original languageEnglish
Pages (from-to)300-304
Number of pages5
JournalMicroelectronics Journal
Volume43
Issue number5
DOIs
Publication statusPublished - 2012 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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