Asymmetric resistive switching characteristics of In2O 3:SiO2 cosputtered thin film memories

Wei Kang Hsieh, Kin Tak Lam, Shoou Jinn Chang

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7 Citations (Scopus)

Abstract

The authors report the fabrication and characterization of resistance switching for a resistance random access memory with a Ti/In2O 3:SiO2/Pt structure. It was found that the device exhibited bipolar resistance switching behavior over one hundred switching cycles and showed stable retention characteristics for over 104 s under 100 mV stress condition. The asymmetric phenomenon of the carrier conduction mechanism at high resistance state was also explored by fitting the current-voltage (I-V) curves and explained by the schematic energy band diagram. It was also found that the switching behavior is due to the migration of oxygen ions and the formation of SiO2 with higher quality at the interface of top electrode and insulator.

Original languageEnglish
Article number020603
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number2
DOIs
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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