Asymmetrical characteristics of Lightly-doped drain MOSFETs

Bin-Da Liu, I. K. Chien

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Asymmetrical and degraded characteristics of drain/source non-overlap LDD MOSFETs resulting from shadowing effects are observed. The substrate and gate current behaviour are explained by two-dimensional simulation of the channel electric field. The lifetime of LDD devices is also tested and compared with conventional MOSFETs. The non-overlap degree and location affect the operation performance as well as the device lifetime. Experiments show that devices with source non-overlap are worse than that those with drain non-overlap.

Original languageEnglish
Pages (from-to)101-109
Number of pages9
JournalInternational Journal of Electronics
Volume70
Issue number1
DOIs
Publication statusPublished - 1991 Jan 1

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Electric fields
Substrates
Experiments

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Liu, Bin-Da ; Chien, I. K. / Asymmetrical characteristics of Lightly-doped drain MOSFETs. In: International Journal of Electronics. 1991 ; Vol. 70, No. 1. pp. 101-109.
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Asymmetrical characteristics of Lightly-doped drain MOSFETs. / Liu, Bin-Da; Chien, I. K.

In: International Journal of Electronics, Vol. 70, No. 1, 01.01.1991, p. 101-109.

Research output: Contribution to journalArticle

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